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Growth Mechanism of Direct Writing of Silicon in AR+ Laser CVD

Published online by Cambridge University Press:  25 February 2011

Takeshi Nagahori  and
Satoru Matsumoto
Takeshi Nagahori
Affiliation:
Department of Electrical Engineering, Keio University Hiyoshi, Yokohama 223, Japan
Satoru Matsumoto
Affiliation:
Department of Electrical Engineering, Keio University Hiyoshi, Yokohama 223, Japan
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Abstract

Silicon lines are directly written using argon ion laser CVD. The thickness profile of the line has a Gaussian-like shape. The thickness profile is calculated with the model based on Arrhenius behavior. A good agreement is obtained.

The effective exposure time is used to analyze the direct writing process. Using it, the average growth rate is estimated to be about 100 times faster than that of conventional large area CVD with the activation energy of 2.4± 0.4eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 189
Copyright
Copyright © Materials Research Society 1989

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References

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