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Growth Kinetics of Grain-Boundary Induced Melting: A Molecular-Dynamics Study

Published online by Cambridge University Press:  28 February 2011

S. R. Phillpot ,
J. F. Lutsko ,
D. Wolf  and
S. Yip
S. R. Phillpot
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne IL 60439
J. F. Lutsko
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne IL 60439
D. Wolf
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne IL 60439
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Abstract

The growth kinetics of melting nucleated at a high-angle twist boundary in silicon are investigated using molecular dynamics. Melting is found to be a two-stage process. In the first stage order is lost within a single plane at the interface and the density of the solid increases to that of the liquid. In the second stage the atomic coordination changes and an isotropic liquid is formed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 141: Symposium T – Atomic Scale Calculations in Materials Science , 1988 , 355
Copyright
Copyright © Materials Research Society 1989

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