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Growth, Characterization and Electrical Properties of PZT thin Film Heterostructures on Silicon by Pulsed Laser Deposition

Published online by Cambridge University Press:  10 February 2011

Soma Chattopadhyay ,
Alex Kvit ,
V. Sreenivasank ,
A.K. Sharma ,
C. B. Lee  and
J. Narayan
Soma Chattopadhyay
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, NC 27411
Alex Kvit
Affiliation:
Department of Electrical Engineering, North Carolina Agricultural and Technical State University, 551 Mcnair Hall, NC 27411
V. Sreenivasank
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, NC 27411
A.K. Sharma
Affiliation:
Department of Electrical Engineering, North Carolina Agricultural and Technical State University, 551 Mcnair Hall, NC 27411
C. B. Lee
Affiliation:
North Carolina State University, Materials Science Dept., Raleigh, NC 27695-7916
J. Narayan
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Department of Electrical Engineering, North Carolina Agricultural and Technical State University, NC 27411
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Abstract

Epitaxial thin films of PbZr0.52Ti0.48O3 (PZT) have been synthesized successfully on SrRuO3/SrTiO3/MgO/TiN/Si heterostructures by pulsed laser deposition. The films were single phase and had (001) orientation. The deposition parameters were varied to obtain the best epitaxial layer for each of the compounds. Transmission electron microscopy indicated good epitaxy for the entire heterostructure and sharp interfaces between the epilayers. Dielectric and P-E hysteresis loop measurements were carried out with evaporated Ag electrodes. The dielectric constant for the films was found to be between 400-450. The value of saturation polarization Ps, was between 55-60 νC/cm2 and the coercive field Ec varied from 60-70 kV/cm. Integration of PZT films with silicon will be useful for future memory and micromechanical devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 143
Copyright
Copyright © Materials Research Society 2000

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References

1) Takayama, R. and Tomita, Y., J. Appl. Phys. 65 p. 1666 (1989)Google Scholar
2) Udaykumar, K.R., Schuele, P., Chen, J., Krupanidhi, S. and Cross, L., J. Appl. Phys. 77 p. 3981 (1995)Google Scholar
3) Shimada, Y. et al. , Integrated Ferroelectrics 11 p. 229 (1995)Google Scholar
4) Kumazawa, Tetsuo et al. , Appl. Phys. Lett. 72 p. 608 (1998)Google Scholar
5) Chang, L.H. and Anderson, W.A., Thin Solid Films 303 p. 94 (1997)Google Scholar
6) Al-Shareef, H.N., Kingon, A.I., Chen, X. and Auciello, O., J. Mater. Res. 9 p. 2960 (1996)Google Scholar
7) Sadashivan, S. et al. , J. Appl. Phys. 83 p. 2165 (1998)Google Scholar
8) Eom, C.B. et al. , Appl. Phys. Lett. 63 p. 2570 (1993)Google Scholar
9) Soma Chattopadhyay et al. (accepted for MRS Symposium Proc.- Fall 1999)Google Scholar
10) Speck, J.S., Seifert, A., Pompe, W. and Ramesh, R., J. Appl. Phys. 76 p. 477 (1994)Google Scholar
11) Haun, M.J., Furman, E., Jang, S.J. and Cross, L.E., Ferroelectrics 99 p. 12 (1989)Google Scholar
12) Lee, K.B., Tirumala, S. and Desu, S.B., Appl. Phys. Lett. 74 p. 1484 (1999)Google Scholar
13) Cho, C.R., Francis, L.F. and Polla, D.L., Materials Lett. 38 p. 125 (1999)Google Scholar