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Growth and Thermal Stability of Thin Niobium Overlayers on (0001) Sapphire Substrates

Published online by Cambridge University Press:  15 February 2011

T. Wagner ,
M. Lorenz ,
P. A. Langjahr  and
M. Ruhle
T. Wagner
Affiliation:
Max-Planck-Institut ffir Metallforschung, Institut fur Werkstoffwissenschaft, 70174 Stuttgart, Germany
M. Lorenz
Affiliation:
Deutsche Forschungsanstalt fuir Luft und Raumfahrt, Institut ftir Technische Thermodynamik, 70569 Stuttgart
P. A. Langjahr
Affiliation:
Max-Planck-Institut ffir Metallforschung, Institut fur Werkstoffwissenschaft, 70174 Stuttgart, Germany
M. Ruhle
Affiliation:
Max-Planck-Institut ffir Metallforschung, Institut fur Werkstoffwissenschaft, 70174 Stuttgart, Germany
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Abstract

Thin Nb films were deposited by MBE on (0001)α-Al2O3 in UHV. At a substrate temperature of 800°C, reflection high energy electron diffraction (RHEED) revealed that the film grew with the orientation relationship (planes of similar symmetry are parallel to each other): (0001)α-Al2O3 ‖ (111)Nb; [2110]α-Al2O3 ‖ [110]Nb. Investigations with conventional transmission electron. microscopy (CTEM) revealed that the film was not perfectly epitaxial after deposition. Small Nb grains with different orientations were embedded in the epitaxial Nb film. During annealing at temperatures well above the deposition temperature, secondary grain growth of the small embedded Nb grains occured, leading to a different epitaxial relationship between the Nb film and the sapphire: (0001)α-Al2O3 ‖ (110)Nb; [0110]α-Al2O3 ‖ [001]Nb.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 83
Copyright
Copyright © Materials Research Society 1996

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