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Growth and Structure of Thin Films by High-Intensity Pulsed Ion-Beam Deposition

Published online by Cambridge University Press:  21 February 2011

YU.F. Ivanov ,
V.M. Matvienko ,
A.V. Potyomkin ,
G.E. Remnev  and
A.N. Zakoutayev
YU.F. Ivanov
Affiliation:
Institute of Nuclear Physics, Tomsk Polytechnic University, 634050, Tomsk, Russia, [email protected]
V.M. Matvienko
Affiliation:
Institute of Nuclear Physics, Tomsk Polytechnic University, 634050, Tomsk, Russia, [email protected]
A.V. Potyomkin
Affiliation:
Institute of Nuclear Physics, Tomsk Polytechnic University, 634050, Tomsk, Russia, [email protected]
G.E. Remnev
Affiliation:
Institute of Nuclear Physics, Tomsk Polytechnic University, 634050, Tomsk, Russia, [email protected]
A.N. Zakoutayev
Affiliation:
Institute of Nuclear Physics, Tomsk Polytechnic University, 634050, Tomsk, Russia, [email protected]
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Abstract

The high-intensity pulsed ion-beam (HIPIB)/solid interaction results in the generation of an ablated plasma ( ∼1020 cm-3; ∼1 eV) which can be used to advantage for the deposition of thin films. Presented are the results of investigation on the deposition by HIPIB of thin films of high-melting metals, i.e. W, Ta, Mo, Nb, as well as of Al and Cu. The kinetics of the layer-by-layer film growth has been studied using transmission electron microscopy (TEM), transmission electron diffraction (TED) and reflection ellipsometry. The experiments were performed on a TEMP-2 supercurrent accelerator (ion energy 500 keV; ion current density at the target 200 A/cm ; power density (0.7 – 1.5) 108 W/cm2; pulse duration 60 ns; pulse repetition rate 8-10 min-1). The deposition of the films was carried out at room temperature at a high rate of 0.6 – 4.0 mm/s using (100)Si, (001)NaCl, glass and glass ceramic substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 593
Copyright
Copyright © Materials Research Society 1996

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References

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