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Growth and Structural Characterization of Znse Single Crystals

Published online by Cambridge University Press:  21 February 2011

Elmer E. Anderson ,
Hai- Yuin Cheng  and
Michael J. Edgell
Elmer E. Anderson
Affiliation:
Department of Physics, University of Alabama in Huntsville, Huntsville, AL 35899
Hai- Yuin Cheng
Affiliation:
Department of Physics, University of Alabama in Huntsville, Huntsville, AL 35899
Michael J. Edgell
Affiliation:
Department of Chemistry, University of Alabama in Huntsville, Huntsville, AL 35899
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Abstract

Single crystals of ZnSe have been grown by the physical vapor transport method in sealed quartz ampoules. The largest crystal grown measures 1 cm x 4 mm x 2 mm and required a total growing time of 11 days. Polished wafers cut from the crystals have been etched and examined by optical microscopy, x-ray diffraction, scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and scanning Auger microscopy (SAM). No impurities or unwanted phases were detected, but frequent twinning occurs. Zn-rich {111} faces were identified by SAM. Triangular etch pits are observed on Zn {lll} faces but not on Se faces. Etch pit densities are about 104 per cm2 on slow-cooled samples but are about 100 times greater when cooling is more rapid.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 152: Symposium H – Optical Materials: Processing and Science , 1989 , 51
Copyright
Copyright © Materials Research Society 1989

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References

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