Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-19T16:31:45.755Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Magnetic Properties of La0.65Pb0.35MnO3 Films

Published online by Cambridge University Press:  10 February 2011

Q. L. Xu ,
M. T. Liu ,
Y. Liu ,
C. N. Borca ,
H. Dulli ,
P. A. Dowben  and
S. H. Liou
Q. L. Xu
Affiliation:
University of Nebraska, Behlen Laboratory of Physics and the Center for Materials Research and Analysis, Lincoln, NE, 68588-0111, [email protected]
M. T. Liu
Affiliation:
University of Nebraska, Behlen Laboratory of Physics and the Center for Materials Research and Analysis, Lincoln, NE, 68588-0111, [email protected]
Y. Liu
Affiliation:
University of Nebraska, Behlen Laboratory of Physics and the Center for Materials Research and Analysis, Lincoln, NE, 68588-0111, [email protected]
C. N. Borca
Affiliation:
University of Nebraska, Behlen Laboratory of Physics and the Center for Materials Research and Analysis, Lincoln, NE, 68588-0111, [email protected]
H. Dulli
Affiliation:
University of Nebraska, Behlen Laboratory of Physics and the Center for Materials Research and Analysis, Lincoln, NE, 68588-0111, [email protected]
P. A. Dowben
Affiliation:
University of Nebraska, Behlen Laboratory of Physics and the Center for Materials Research and Analysis, Lincoln, NE, 68588-0111, [email protected]
S. H. Liou
Affiliation:
University of Nebraska, Behlen Laboratory of Physics and the Center for Materials Research and Analysis, Lincoln, NE, 68588-0111, [email protected]
Get access

Abstract

We have successfully grown La0.65PbO.35MnO3 thin films by a RF magnetron sputtering method onto (100) LaAlO3 single crystal substrates. X-ray diffraction measurements are consistent with a (100) cubic orientation of the films. The fourfold symmetry showed by LEED(Low Energy Electron Diffraction) patterns indicate that the films have surface order. STM(Scanning Tunneling Microscopy) measurements indicate that the surface of the films were smooth, with approximate 5 nm roughness. XPS (X-ray Photoemission Spectroscopy) shows that the surface defect density in the films is comparatively low. The bulk magnetization of the films at 6K in 1 T magnetic field reached 77 emu/g and a Curie temperature near 354 K, close to maximum resistivity. A negative magnetoresistance of 47% was observed at 320K in 5.5 T magnetic field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 602: Symposium JJ – Magnetoresistive Oxides & Related Materials , 1999 , 75
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kusters, R. M., Singleton, J., Keen, D. A., Greevy, R. M., and Hayes, W., Physica B 155, p. 362 (1989).Google Scholar
2. Jin, S., Tiefel, T. H., McCormack, M., Fastnacht, R. A., Ramesh, R., and Chen, L. H., Science 264, p. 413 (1994).Google Scholar
3. Asamitsu, A., Moritomo, Y., Kumi, R., Tomioka, , and Tokura, Y., Phys. Rev. B 54, p. 1716 (1996).Google Scholar
4. Urushibara, A., Moritomo, Y., Arima, T., Asamitsu, A., Kido, G., and Tokura, Y., Phys. Rev. B 51, p. 14103 (1995).Google Scholar
5. Morrish, A. H., Evans, B. J., Eaton, J. A., and Leung, L. K., Canadian J. of Phys. 47, p. 2691 (1969).Google Scholar
6. Leung, L. K., Morrish, A. H., and Searle, C. W., Canadian J. of Phys. 47, p. 2697 (1969).Google Scholar
7. Searle, C. W., and Wang, S. T., Canadian J. of Phys. 47, p. 2703 (1969).Google Scholar
8. Searle, C. W., and Wang, S. T., Canadian J. of Phys. 48, p. 2023 (1970).Google Scholar
9. Leung, L. K., and Morrish, A. H., Phys. Rev. B 15, p. 2485 (1977).Google Scholar
10. Manoharan, S. Sundar, Vasanthacharya, N. Y., and Hegede, M. S., J. Appl. Phys. 76, p. 3923 (1994).Google Scholar
11. Satyalakshmi, K. M., Manoharan, S. Sundar, Hegede, M. S., Prasad, V., and Subramanyam, S. V., J. Appl. Phys. 78, p. 6861 (1995).Google Scholar
12. Srinivasan, G., Babu, V. Suresh, and Seehra, M. S., Appl. Phys. Lett. 67, p. 2090 (1995).Google Scholar
13. Wang, J. Q., Barker, R. C., Cui, G. J., Tamagawa, T., and Halpern, B. L., Appl. Phys. Lett. 71, p. 3418 (1997).Google Scholar
14. Choi, Jaewu, Dulli, Hani, Liou, S. H., Dowben, P.A., and Langell, M. A., Phys. Stat. Sol. (b) 214, p. 45 (1999).Google Scholar
15. Jia, Y. X., Lu, Li, Khazeni, K., Crespi, Vincent H., Zettl, A., and Cohen, Marvin L., Phys. Rev. B 52, p. 9147 (1995).Google Scholar