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Growth and low temperature photoluminescence of silicon nanowires for different catalysts

Published online by Cambridge University Press:  31 January 2011

Olivier Demichel ,
Fabrice Oehler ,
Vincent Calvo ,
Pierre Noé ,
Adrien Besson ,
Nicolas Pauc ,
Pascal Gentile ,
Thierry Baron  and
Noël Magnea
Olivier Demichel
Affiliation:
[email protected]@gmail.com, CEA/INAC, SP2M, Grenoble, France
Fabrice Oehler
Affiliation:
[email protected], CEA/INAC, SP2M, Grenoble, France
Vincent Calvo
Affiliation:
[email protected], CEA/INAC, SP2M, Grenoble, France
Pierre Noé
Affiliation:
[email protected], CEA/INAC, SP2M, Grenoble, France
Adrien Besson
Affiliation:
[email protected], CEA/INAC, SP2M, Grenoble, France
Nicolas Pauc
Affiliation:
[email protected], CEA/INAC, SP2M, Grenoble, France
Pascal Gentile
Affiliation:
[email protected], CEA/INAC, SP2M, Grenoble, France
Thierry Baron
Affiliation:
[email protected], CNRS-LTM, Grenoble, France
Noël Magnea
Affiliation:
[email protected], CEA/INAC, SP2M, Grenoble, France
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Abstract

We report the growth of silicon nanowires (SiNWs) by chemical vapor deposition (CVD) with several catalysts. We performed low temperature photoluminescence (PL) experiments on as-grown SiNWs for the following catalysts: Au, Cu, TiSi, PdSi and PtSi. Nanowires are chemically treated with an aqua regia solution to remove the catalyst droplets, this step is followed by a thermal oxidation process. We compared the PL of as-grown and processed SiNWs for each catalyst.

Keywords

Sinanoscalechemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1178: Symposium AA – Semiconductor Nanowires–Growth, Size-Dependant Properties and Applications , 2009 , 1178-AA04-10
Copyright
Copyright © Materials Research Society 2009

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References

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