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Growth and Doping of Zinc Selenide by Molecular Bean Epitaxy

Published online by Cambridge University Press:  21 February 2011

J.M. Depuydt ,
H. Cheng ,
M.A. Haase  and
J.E. Potts
J.M. Depuydt
Affiliation:
3M Company, 201-1N-35 / 3M Center, St. Paul, MN 55144
H. Cheng
Affiliation:
3M Company, 201-1N-35 / 3M Center, St. Paul, MN 55144
M.A. Haase
Affiliation:
3M Company, 201-1N-35 / 3M Center, St. Paul, MN 55144
J.E. Potts
Affiliation:
3M Company, 201-1N-35 / 3M Center, St. Paul, MN 55144
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Extract

Recently, with the advent of thermal nonequilibrium growth techniques like molecular beam epitaxy and metalorganic chemical vapor deposition, great progress has been made in overcoming some of the problems traditionally encountered in the growth and doping of ZnSe. Breakthroughs have been made in several areas including the growth of high quality undoped films, in intentional n-type doping and, most importantly, in p-type doping. In this paper we will review the progress made in the growth and doping of ZnSe by molecular beam epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 97
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 Fitzpatrick, B., J. Crystal Growth 86, 106 (1988).Google Scholar
2 Hartman, H., Mach, R. and Selle, B., in Current Topics in Materials Science, edited by Kaldis, E. (North-Holland, Amsterdam, 1982), Vol.9.Google Scholar
3 Jewsbury, P. and Holloway, S., J. Phys. C 9, 3205 (1976).Google Scholar
4 Smith, D. and Pickhardt, V., J. Appl. Phys. 46, 2366 (1975).Google Scholar
5 Park, R.M., Mar, H.A. and Salansky, N.M., J. Vac. Sci. Technol. B3, 1637 (1985).Google Scholar
6 Ohishi, M., Ohmori, K., Fujii, Y., Saito, H. and Tiong, S., Proceed. of the 3rd Int. Conf. on II-VI Compounds, 324 (1987).Google Scholar
7 Menda, K., Takayasu, I., Minato, T. and Kawashima, M., Proceed. of the 3rd Int. Conf. on II-VI Compounds, 342 (1987).Google Scholar
8 Werthen, J., Stutius, W. and Ponce, F., J. Vac. Sci. Technol. B1 656 (1983).Google Scholar
9 Park, R. and Mar, H., Appl. Phys. Lett 48, 529 (1986).Google Scholar
10 Aven, M. and Woodbury, H., Appl. Phys. Lett. 1, 53 (1962).Google Scholar
11 Yao, T., Makita, Y. and Maekawa, S., Appl. Phys. Lett. 35, 97 (1979).Google Scholar
12 Yao, T., Ogura, M., Matsuoka, S. and Morishita, T., Jpn. J. Appl. Phys. 22, L144 (1983).Google Scholar
14 DePuydt, J., Cheng, H., Potts, J., Smith, T. and Mohapatra, S., J. Appl. Phys. 62, 4756 (1987).Google Scholar
15 DePuydt, J., Smith, T., Potts, J., Cheng, H. and Mohapatra, S., J. Cryst. Growth 86, 318 (1988).Google Scholar
16 Yoneda, K., Hishida, Y., Toda, T., Ishii, H. and Niina, T., Appl. Phys. Lett. 45, 1300 (1984).Google Scholar
17 Kolodziejski, L., Gunshor, R., Bonsett, T., Venkata-subramanian, R., Datta, S., Bulsma, R., Becker, W. and Otsuka, N., Appl. Phys. Lett. 47Z, 169 (1985).Google Scholar
18 Ohkawa, K., Mitsuyu, T. and Yamazaki, O., Extended Abs. of the 18th Conf. on Solid State Dev. and Mat., 635 (1986)Google Scholar
19 Yao, T., Sera, T., Makita, Y. and Maekawa, S., Surface Science 86, 120 (1979).Google Scholar
20 Niina, T., Minato, T. and Yoneda, K., Jpn. J. Applied Phys. 21, L387 (1982).Google Scholar
21 Vaziri, M., Reifenberger, R., Gunshor, R., Kolodziejski, L., Venkatasan, S. and Pierrel, R., J. Vac. Sci. and Technol. B7, 253 (1989).Google Scholar
22 Kamata, A., Uemoto, T., Okajima, M., Hirahara, K., Kawachi, M. and Beppu, T., J. Crystal Growth 86, 285 (1988). Note: The samples in this report were deposited by MOCVD. Please contact J. DePuydt if you have information on Al-doping of ZnSe by MBE.Google Scholar
23 Cheng, H., DePuydt, J., Potts, J. and Haase, M., J. Cryst. Growth 95, 512 (1988).Google Scholar
24 Nakajima, T., Matsubara, M., Tamura, S., Yokota, K. and Katayama, S., Abstracts of the Spring meeting of the Japanese Society of Applied Physics, Vol. 1, p.374, April 1989, Chiba, Japan. Note: The films in this report were deposited by an ion-beam method. Please contact J. DePuydt if you have information on Br-doping of ZnSe by MBE.Google Scholar
25 Shibata, N., Ohki, A. and Zembutsu, S., Jpn. J. Appl. Phys. 27, L251 (1988). Note: The films in this report were grown by MOVPE. Please contact J. DePuydt if you have information on I-doping of ZnSe by MBE.Google Scholar
26 Cheng, H., DePuydt, J., Potts, J. and Smith, T., Appl. Phys. Lett. 52, 147 (1987).Google Scholar
27 Potts, J., Cheng, H., DePuydt, J. and Haase, M., Fourth Int'l. Conf. on II-VI Compounds, Technische Universitat, Berlin, 17-22 Sept. 1989 (to be published in J. Cryst. Growth).Google Scholar
28 Miyajima, T., Akimoto, K. and Mori, Y., Abstracts of the Spring Meeting of the Japanese Society of Applied Physics, Vol. 1, p.376, April 1989, Chiba, Japan.Google Scholar
29 Mitsuyu, T., Ohkawa, K., and Yamazaki, O., Appl. Phys. Lett. 49, 1348 (1986).Google Scholar
30 Park, R., Mar, H. and Salansky, N., J. Appl. Phys. 58, 1047 (1985).Google Scholar
31 Yao, T. and Okada, Y., Jpn. J. Appl. Phys. 25, 821 (1986).Google Scholar
32 DePuydt, J., Smith, T., Potts, J., Cheng, H. and Mohapatra, S., J. Cryst. Growth, 86, 318 (1988).Google Scholar
33 Shibli, S., Tamargo, M., Skromme, B., Schwartz, S., Schwartz, C., Nahory, R. and Martin, R., 10th MBE Workshop, North Carolina State University, Raleigh, NC (to be published in the J. Vac. Sci. and Technol.).Google Scholar
34 Park, R., Kleiman, J., Mar, H. and Smith, T., J. Appl. Phys. 63, 2851 (1988).Google Scholar
35 Akimoto, K., Miyajima, T. and Mori, Y., Jpn. J. Appl. Phys. 28, L531 (1989).Google Scholar
36 Akimoto, K., Miyajima, T. and Mori, Y., Phys. Rev. B 39, 3138 (1989).Google Scholar
37 DePuydt, J., Haase, M., Cheng, H. and Potts, J., Appl. Phys. Lett. 55, 1103 (1989).Google Scholar
38 Haase, M., Cheng, H., DePuydt, J. and Potts, J., (to be published in J. Appl. Phys., Jan. 1, 1990).Google Scholar
39 Hamm, R., Panish, M., Nottenburg, R., Chen, Y. and Humphrey, D., Appl. Phys. Lett. 54. 2586 (1989).Google Scholar
40 Cheng, H., DePuydt, J., Haase, M. and Potts, J., (submitted to Appl. Phys. Lett.)Google Scholar
41 Cheng, H., DePuydt, J., Haase, M. and Potts, J., 11th MBE workshop Raleigh, NC; Sept. 1989 (to be published in J. Vac. Sci. and Technol.)Google Scholar
42 Harris, J., Ashenford, D., Foxon, C., Dobson, P. and Joyce, B., Appl. Physics A, 33, 87 (1984).Google Scholar
43 Cheng, H., DePuydt, J., Potts, J. and Haase, M., J. Crystal Growth 95, 512 (1989).Google Scholar
44 Xu, F., Vos, M., Weaver, J., and Cheng, H., Phys. Rev. B38, 13418 (1988).Google Scholar
45 Shibata, N., Ohki, A., Nakanishi, H. and Zembutsu, S., J. Crystal Growth 86, 273 (1988).Google Scholar
46 Capasso, F., Cho, A., Mohammed, K. and Foy, P., Appl. Phys. Lett. 46, 664 (1985).Google Scholar