Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T01:53:38.342Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Doping of GaN Directly on 6H-SiC by MBE

Published online by Cambridge University Press:  21 February 2011

D. Korakakis ,
A. Sampath ,
H.M. NG ,
G. Morales ,
I.D. Goepfert  and
T.D. Moustakas
D. Korakakis
Affiliation:
Molecular Beam Epitaxy Laboratory, Dept. of Electrical Engineering and Center for Photonics Research, Boston University, 44 Cummington St., Boston, MA 02215
A. Sampath
Affiliation:
e-mail address: [email protected]
H.M. NG
Affiliation:
e-mail address: [email protected]
G. Morales
Affiliation:
Physics Department, Boston University, 590 Commonwealth Avenue, Boston MA 02215
I.D. Goepfert
Affiliation:
e-mail address: [email protected]
T.D. Moustakas
Affiliation:
e-mail address: [email protected]
Get access

Abstract

We report on methods for the growth of GaN by MBE directly on 6H-SiC substrates. The films were doped p-type by the incorporation of Mg and the samples were characterized by studying their structure and morphology by RHEED, XRD and SEM and their recombination properties by photoluminescence measurements. The undoped films were found to be atomically smooth with 2×2 surface reconstruction and have an x-ray rocking curve with a FWHM of 3.5 arcmin. The photoluminescence spectra indicate that recombination is dominated by transition across the gap. The p-type doped films have a rocking curve with FWHM of 6.5 arcmin. and the majority of recombination occurs through D-A transitions at 3.26 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 151
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Lin, M.E., Sverdlov, S., Zhou, L., Morkoç, H., Appl. Phys. Lett. 62 (26), p. 3479 (1993)Google Scholar
2 Warren, T.W. Jr., Bremser, M.D., Ailey, K.S., Carlson, E., Perry, W.G., Davis, R.F., Appl. Phys.Lett. 67 (3), p. 401 (1995)Google Scholar
3 Pankove, J., Chang, S.S., Lee, H.C., Molnar, R.J., Moustakas, T.D., Van Zeghbroeck, B., IEDM-94 p. 389 (1994)Google Scholar
4 CREE Research , Inc., U.S. Patent No. 5,393,993, "Buffer Structure between silicon carbide and gallium nitride and resulting semiconductor devices", February 28, 1995 Google Scholar
5 Moustakas, T.D. and Molnar, R.J., Mat. Res. Soc. Symp. Proc., Vol. 281, p. 753 (1993)Google Scholar
6 CREE Research, research grade.Google Scholar
7 Molnar, R.J., Singh, R. and Moustakas, T.D., J. Elec. Mat, Vol. 24, p.275 (1995)Google Scholar
8 Lagerstedt, O., Monemar, B., J. Appl. Phys. 45, p. 2266 (1974)Google Scholar