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The Growth and Doping of Al(As)Sb by Metal-Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

R. M. Biefeld ,
A. A. Allerman  and
S. R. Kurtz
R. M. Biefeld
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
A. A. Allerman
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
S. R. Kurtz
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
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Abstract

AlSb and AlAsxSb1−x epitaxial films grown by metal-organic chemical vapor deposition were successfully doped p- or n-type using diethylzinc or tetraethyltin, respectively. AlSb films were grown at 500°C and 76 torr using trimethylamine or ethyldimethylamine alane and triethylantimony. We examined the growth of AlAsSb using temperatures of 500 to 600 ° C, pressures of 65 to 630 torr, V/Ill ratios of 1–17, and growth rates of 0.3 to 2.7 μm/hour in a horizontal quartz reactor. SIMS showed C and 0 levels below 2 × 1018 cm−3 and 6×1018 cm−3 respectively for undoped AlSb. Similar levels of O were found in AlAs0.16Sb0.84 films but C levels were an order of magnitude less in undoped and Sn-doped AlAs0.16 Sb0.84 films. Hall measurements of AlAs0.16Sb0.84 showed hole concentrations between l×1017 cm−3 to 5×1018 cm−3 for Zn-doped material and electron concentrations in the low to mid 1018 cm−3 for Sndoped material. We have grown pseudomorphic InAs/InAsSb quantum well active regions on AlAsSb cladding layers. Photoluminescence of these layers has been observed up to 300 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 33
Copyright
Copyright © Materials Research Society 1996

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References

[1] Kurtz, S. R., Biefeld, R. M., Dawson, L. R., Baucom, K. C., and Howard, A. J., Appl. Phys. Lett. 64, 812 (1994).Google Scholar
[2] Choi, H. K., Turner, G. W., and Liau, Z. L., Appl. Phys. Lett. 65, 2251 (1994).Google Scholar
[3] Zhang, Y-H., Appl. Phys. Lett. 66, 118 (1995).Google Scholar
[4] Biefeld, R. M., Allerman, A. A., and Pelczynski, M. W., Appl. Phys. Lett. 68, 932 (1996).Google Scholar
[5] Chen, W. K., Ou, J., and Lee, W-I., Jpn, J. Appl. Phys. 33, L402 (1994).Google Scholar
[6] Cao, D. S., Fang, Z. M., and Stringfellow, G. B., J. Crystal Growth, 113, 441 (1991).Google Scholar
[7] Bougnot, G. J., Foucaran, A. F., Marjan, M., Etienne, D., Bougnot, J., Delannoy, F. M. H., and Roumanille, F. M., J. Crystal Growth, 77, 400 (1987).Google Scholar
[8] Leroux, M., Tromson-Carli, A., Gibart, P., Verie, C., Bernard, C., and Schouler, M. C.,, J. Crystal Growth, 48, 367 (1980).Google Scholar
[9] Wang, C. A., Finn, M. C., Salim, S., Jensen, K. F., and Jones, A. C., Appl. Phys. Lett. 67, 1384 (1995).Google Scholar
[10] Stringfellow, G. B.. “Organometallic Vapor Phase Epitaxy:Theory and Practice” (Academic Press, Inc., San Diego, CA, 1989).Google Scholar
[11] Tischler, M. A., Potemski, R. M., Kuech, T. F., Cardone, F., Goorsky, M. S., and Scilla, G., J. Crystal Growth, 107, 268 (1991).Google Scholar
[12] Hobson, W. S., Harris, T. D., Abernathy, C. R., and Pearton, S. J., Appl. Phys. Lett., 58, 77 (1991).Google Scholar
[13] Schneider, R. P., Bryan, R. P., Jones, E. D., Biefeld, R. M., and Olbright, G. R., J. Crystal Growth, 123, 487 (1992).Google Scholar
[14] Biefeld, R.M., Hills, C.R. and Lee, S.R., J. Crystal Growth, 91,515 (1988).Google Scholar
[15] Kurtz, S. R. and Biefeld, R. M., Appl. Phys. Lett. 66, 364 (1995).Google Scholar