Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-27T00:41:02.911Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Characterization of ZnO Film on Sapphire by the Helicon Wave Plasma Assisted Evaporation Process

Published online by Cambridge University Press:  21 March 2011

Kyoung-Bo Kim ,
Tae-Hee Park ,
Ki-Sung Kim  and
Seon-Hyo Kim
Kyoung-Bo Kim
Affiliation:
Department of Materials Science & EngineeringPohang University of Science and Technology, San 31, Hyoja-dong Pohang, Kyungbuk, 790-784, Korea
Tae-Hee Park
Affiliation:
Department of Materials Science & EngineeringPohang University of Science and Technology, San 31, Hyoja-dong Pohang, Kyungbuk, 790-784, Korea
Ki-Sung Kim
Affiliation:
Department of Materials Science & EngineeringPohang University of Science and Technology, San 31, Hyoja-dong Pohang, Kyungbuk, 790-784, Korea
Seon-Hyo Kim
Affiliation:
Department of Materials Science & EngineeringPohang University of Science and Technology, San 31, Hyoja-dong Pohang, Kyungbuk, 790-784, Korea Email, Seon-Hyo Kim: [email protected]
Get access

Abstract

The growth of ZnO film on (0001) sapphire substrates was studied using the high density helicon wave oxygen plasma (>1011/cm2) assisted evaporation process. The addition of Ar into oxygen plasma (Ar/O2=1/2) enhanced the production of excited atomic oxygen (O*). The effect of a grounded grid installed at the exit of the plasma source on the crystallinity and optical properties of film is discussed. The full width at half maximum (FWHM) of θ rocking curve for (0002) plane is 0.53° under grid installation while 0.63° without the grid, indicating slightly improved crystallinity when adopting a grounded grid. The AFM image for the film deposited with grid installation shows a smoother surface morphology than in the case of no grid. PL spectra for the film deposited with the aid of a grid show a strong near-band edge emission at 3.36 eV at 10K, but those without a grid show prominent deep-level emissions. The deep level emission is attributed to the impurities and native defects in the film. The optical properties were greatly improved by a grounded grid, which effectively eliminated the ionic species and selectively extracted the excited neutrals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F3.16
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., and Fasol, G., “The Blue Llaser Diode”, Springer, Berlin (1997)Google Scholar
2. Strite, S., and Morkoc, H., J. Vac. Sci. Technol. B 10, 1237 (1992)Google Scholar
3. Chen, Y. F., Bagnall, D. M., Koh, H. J., Park, K. I., Hiraga, K., Zhu, Z., and Yao, T., J. Appl. Phys. 84 (7), 3912 (1998)Google Scholar
4. Ohtomo, A., Kawasaki, M., Ohkubo, I., Koinuma, H., Yasuda, T., and , Segawa, Appl. Phys. Lett. 75 (7), 980 (1999)Google Scholar
5. Fukumura, T., Jin, Z., Ohtomo, A., Koinuma, H., and Kawasaki, M., Appl. Phys. Lett. 75 (21), 3366 (1999)Google Scholar
6. Kim, K. K., Song, J. H., Jung, H. J., Park, S. J., Song, J. H., and Lee, J. Y., J. Vac. Sci. Technol. A 18 (6), 2864 (2000)Google Scholar
7. Im, S., Jin, B. J., and Yi, S., J. Appl. Phys. 87, 4558 (2000)Google Scholar
8. Chen, Y. F., Ko, H. J., Hong, S. K., Sekiuchi, T., Yao, T., and Segawa, Y., J. Vac. Sci. Technol. B 18 (3), 1514 (2000)Google Scholar
9. Kim, K. S., and Kim, S. H., J. Vac. Sci. Technol. A 18 (6), 2847 (2000)Google Scholar
10. Boswell, R. W., Plasma Phys. Controlled Fusion 26, 1147 (1984)Google Scholar
11. Kim, K. S., Shim, H. S., and Kim, S. H., J. Cryst. Growth 212, 74 (2000)Google Scholar
12. Park, Y. J., O'Keeffe, P., Ozasa, K., Mutoh, H., Aoyagi, Y., and Mon, S.K., J. Appl. Phys. 81 (5), 2114 (1997)Google Scholar
13. Powell, R. C., Lee, N. E., Kim, Y. W., and Greene, J. E., J. Appl. Phys. 73, 189 (1993)Google Scholar
14. Bethke, S., Pan, H., and Wessels, B. W., Appl. Phys. Lett. 52 (2), 138 (1988)Google Scholar
15. Chen, Y. F., Bagnall, D. M., Zhu, Z., Sekiuchi, T., Park, K. T., Hirage, K., Yao, T., Koyama, S., Shen, M. Y., and Goto, T., J. Cryst. Growth 181, 165 (1997)Google Scholar