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Growth and Characterization of Zn1-xMnxSe1-ySy Epilayers and Related Heterostructures

Published online by Cambridge University Press:  15 February 2011

F. S. Flack ,
N. Samarth  and
F. Semendy
F. S. Flack
Affiliation:
Department of Physics, Pennsylvania State University, University Park, PA, 16801 SEDD, The Army Research Laboratory, Fort Belvoir, VA 22060
N. Samarth
Affiliation:
Department of Physics, Pennsylvania State University, University Park, PA, 16801 SEDD, The Army Research Laboratory, Fort Belvoir, VA 22060
F. Semendy
Affiliation:
Department of Physics, Pennsylvania State University, University Park, PA, 16801 SEDD, The Army Research Laboratory, Fort Belvoir, VA 22060
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Abstract

We describe the growth of (Zn,Mn)(S,Se) epitaxial layers of high structural quality on (100) GaAs substrates. Double crystal x-ray diffraction (DCXRD) measurements indicate that quaternary epilayers nearly lattice-matched with GaAs are characterized by DCXRD curves with a foil width at half maximum in the range 30 – 60 arc seconds. Photoluminescence (PL) spectroscopy is employed to map the variation of the energy gap of the quartenary alloys over a wide range of alloy compositions. Finally, temperature dependent PL is used to examine the viability of (Zn,Mn)(S,Se) alloys as confining layers for ZnSe and (Zn,Cd)Se quantum wells. While efficient exciton confinement is demonstrated through the observation of robust PL from such quantum wells up to high temperatures, the renormalization of the quartenary band gap by spin fluctuations leads to a rapid decrease in confinement with increase in temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 293
Copyright
Copyright © Materials Research Society 1997

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References

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