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Growth and Characterization of UHV/CVD Si/SiGe Strained-Layer Superlattices on Bulk Crystal SiGe Substrates

Published online by Cambridge University Press:  15 March 2011

S.R. Sheng ,
M. Dion ,
S.P. Mcalister  and
N.L. Rowell
S.R. Sheng
Affiliation:
Device Physics, Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, ON K1A 0R6, Canada
M. Dion
Affiliation:
SiGe Semiconductor, 2680 Queensview Drive, Ottawa, ON K2B 8J9, Canada
S.P. Mcalister
Affiliation:
Device Physics, Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, ON K1A 0R6, Canada
N.L. Rowell
Affiliation:
Institute for National Measurement Standards, National Research Council of Canada, Ottawa, ON K1A 0R6, Canada
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Abstract

High-quality short-period Si/SiGe strained-layer superlattices have been grown on bulk single-crystal SiGe substrates using a commercial low-temperature ultrahigh vacuum chemical vapor deposition (UHV/CVD) reactor. These superlattices were characterized by high-resolution x-ray diffraction (HRXRD), Auger electron spectroscopy (AES), atomic force microscopy (AFM), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL). HRXRD, AES, and XTEM results confirm that the materials deposited are high crystal-quality superlattice layers with abrupt interfaces and excellent thickness and composition uniformity across superlattices of 5 periods. AFM images show similar surface RMS roughness of much less than 1 nm for both the top layer surface and the starting substrate surface, indicating very smooth surfaces. PL measurements further confirm material quality and composition, and show sharp, well-resolved near band-edge BE and FE PL and strong broad sub-gap PL perhaps related to direct-gap superlattice transitions. The materials grown here are very promising for applications of both high-speed electronic devices and high-efficiency optoelectronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A3.6
Copyright
Copyright © Materials Research Society 2002

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References

1. Cressler, J. D., IEEE Spectrum Mag., 32, 49 (1995).Google Scholar
2. Abstreiter, G., Brugger, H., Wolf, T., Jorke, H., and Herzog, H.J., Phys. Rev. Lett. 54, 2441 (1985).Google Scholar
3. Fitzgerald, E.A., Xie, Y.H., Monroe, D., Silverman, P.J., Kuo, J.M., Kortan, A.R., Thiel, F.A., and Weir, B.E., J. Vac. Sci. Technol. B10, 1807 (1992).Google Scholar
4. Herzog, H.J., Jorke, H., Kasper, E., and Mantl, S., J. Electrochem. Soc. 136, 3026 (1989).Google Scholar
5. Sheng, S.R., Dion, M., McAlister, S.P., and Rowell, N.L., J. Vac. Sci. Technol. A (to be published).Google Scholar
6. Liu, J.L., Moore, C.D., U'Ren, G.D., Luo, Y.H., Lu, Y., Jin, G., Thomas, S.G., Goorsky, M.S., and Wang, K.L., Appl. Phys. Lett. 75, 1586 (1999).Google Scholar
7. Schäffler, F., Semicond. Sci. Technol. 12, 1515 (1997).Google Scholar
8. Deitch, R.H., Jones, S.H., and Digges, T. G., J. of Electronic Materials 29, 1074 (2001).Google Scholar
9. Lafontaine, H., Houghton, D.C., Elliott, D., Rowell, N.L., Baribeau, J.-M., Laframboise, S., Sproule, G.I., and Rolfe, S.J., J. Vac. Sci. Technol. B14, 1675 (1996).Google Scholar
10. Churchill, A.C., Robbins, D.J., Wallis, D.J., Griffin, N., Paul, D.J., Pidduck, A.J., Leong, W.Y., and Williams, G.M., J. Vac. Sci. Technol. B16, 1634 (1998).Google Scholar
11. Jain, S.C. and Hayes, W., Semicond. Sci. Technol. 6, 547 (1991).Google Scholar
12. Zachai, R., Eberl, K., Abstreiter, G., Kasper, E., and Kibbel, H., Phys. Rev. Lett. 64, 1055 (1990).Google Scholar
13. Bremond, G., Souifi, A., Barros, O. De, Benmansour, A., Warren, P., and Dutartre, D., J. Cryst. Growth 157, 116 (1995).Google Scholar
14. Robbins, D.J., Canham, L.T., Barnett, S.J., Pitt, A.D., and Calcott, P., J. Appl. Phys. 71, 1407 (1992).Google Scholar
15. Noël, J.-P., Rowell, N.L., Houghton, D.C., Wang, A., and Perovic, D.D., Appl. Phys. Lett. 61, 690 (1992).Google Scholar
16. Sheng, S.R., Dion, M., McAlister, S.P., and Rowell, N.L., (unpublished).Google Scholar