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Growth and Characterization of Ternary and Quaternary Compounds of Iny (AlxGa1−x)1-yAs on (100) InP

Published online by Cambridge University Press:  26 February 2011

W. F. Tseng ,
J. Comas ,
B. Steiner ,
G. Metze ,
A. Cornfeld ,
P. B. Klein ,
D. K. Gaskill ,
W. Xia  and
S. S. Lau
W. F. Tseng
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Md 20899
J. Comas
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Md 20899
B. Steiner
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Md 20899
G. Metze
Affiliation:
COMSAT, Clarksburg, Md 20906.
A. Cornfeld
Affiliation:
COMSAT, Clarksburg, Md 20906.
P. B. Klein
Affiliation:
COMSAT, Clarksburg, Md 20906.
D. K. Gaskill
Affiliation:
Naval Research Laboratory. Washington, DC 20375
W. Xia
Affiliation:
University of California, San Diego, La Jolla, Ca 92093
S. S. Lau
Affiliation:
University of California, San Diego, La Jolla, Ca 92093
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Abstract

The acquisition of RHEED oscillation information on (100) GaAs substrates is described for use in the growth of “lattice-matched] Iny (AlxGa1−x)1-Y As layers on (100) InP substrates with 0.52 < y < 0.53 and 0.00 < x < 1.00. The observed frequency of the RHEED oscillations on GaAs is the same as on InP, however, the measured lattice parameters of the grown layers are less than that of InP. The x-ray diffraction images show that the misfit dislocations perpendicular to the primary flats of 2” round (100) InP wafers are denser than the parallel ones. Photoluminescence (at 10K) and photoreflectance (at 300K) measurements on a composite layer structure of x=0, 0.2, 0.4, 0.6, 0.8 and 1 clearly show six distinct peaks with narrow FWHMs of less than 20 meV. The measured bandgaps increase linearly with the Al content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 117
Copyright
Copyright © Materials Research Society 1992

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References

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