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Growth and Characterization of Si-GaP and Si-GaP-Si Heterostructures

Published online by Cambridge University Press:  22 February 2011

N. Dietz ,
S. Habermehl ,
J. T. Kelliher ,
G. Lucovsky  and
K. J. Bachmann
N. Dietz
Affiliation:
Department of Material Science and Engineering andDepartment of Physics North Carolina State University, Raleigh, NC 27695
S. Habermehl
Affiliation:
Department of Material Science and Engineering andDepartment of Physics North Carolina State University, Raleigh, NC 27695
J. T. Kelliher
Affiliation:
Department of Material Science and Engineering andDepartment of Physics North Carolina State University, Raleigh, NC 27695
G. Lucovsky
Affiliation:
Department of Material Science and Engineering andDepartment of Physics North Carolina State University, Raleigh, NC 27695
K. J. Bachmann
Affiliation:
Department of Material Science and Engineering andDepartment of Physics North Carolina State University, Raleigh, NC 27695
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Abstract

The low temperature epitaxial growth of Si / GaP / Si heterostructures is investigated with the aim using GaP as a dielectric isolation layer for Si circuits. GaP layers have been deposited on Si(100) surfaces by chemical beam epitaxy (CBE) using tertiarybutyl phosphine (TBP) and triethylgallium (TEG) as source materials. The influence of the cleaning and passivation of the GaP surface has been studied in-situ by AES and LEED, with high quality epitaxial growth proceeding on vicinal GaP(100) substrates. Si / GaP / Si heterostructures have been investigated by cross sectional high resolution transmission electron microscope (HRTEM) and secondary ion mass spectroscope (SIMS). These methods reveal the formation of an amorphous SiC interlayer between the Si substrate and GaP film due to diffusion of carbon generated in the decomposition of the metalorganic precursors at the surface to the GaP/Si interface upon prolonged growth (layer thickness > 300Å). The formation of twins parallel to {111} variants in the GaP epilayer are extended into the subsequently grown Si film with minor generation of new twins.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 495
Copyright
Copyright © Materials Research Society 1994

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References

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