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Growth and Characterization of PbSe and Pb1−xSnxSe Layers on Si (100)

Published online by Cambridge University Press:  10 February 2011

H. K. Sachar ,
I. Chao ,
X. M. Fang  and
P. J. Mccann
H. K. Sachar
Affiliation:
[email protected]
I. Chao
Affiliation:
School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK 73019.
X. M. Fang
Affiliation:
School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK 73019.
P. J. Mccann
Affiliation:
School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK 73019.
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Abstract

Crack-free layers of PbSe were grown on Si (100) by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. The PbSe layer was grown by LPE on Si (100) using a MBE-grown PbSe/BaF2/CaF2 buffer layer structure. Pb1−xSnxSe layers with tin contents in the liquid growth solution equal to 3%, 5%, 6%, 7%, and 10%, respectively, were also grown by LPE on Si (100) substrates using similar buffer layer structures. The LPE-grown PbSe and Pb1−xSnxSe layers were characterized by optical Nomarski microscopy, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM). Optical Nomarski characterization of the layers revealed their excellent surface morphologies and good growth solution wipe-offs. FTIR transmission experimentsshowed that the absorption edge of the Pb1−xSnxSe layers shifted to lower energies with increasing tin contents. The PbSe epilayers were also lifted-off from the Si substrate by dissolving the MBE-grown BaF2 buffer layer. SEM micrographs of the cleaved edges revealed that the lifted-off layers formed structures suitable for laser fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 371
Copyright
Copyright © Materials Research Society 1998

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