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Growth and Characterization of Pb-Based Ferroelectric Oxide Thin Films by Mocvd

Published online by Cambridge University Press:  15 February 2011

Masaru Shimizu  and
Tadashi Shiosaki
Masaru Shimizu
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology 2167 Shosha, Himeji, Hyogo 671–22, Japan
Tadashi Shiosaki
Affiliation:
Department of Electronics Science and Engineering, Faculty of Engineering, Kyoto University Yoshida Honmach, Sakyo-ku, Kyoto 606, Japan
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Abstract

Using the MOCVD process to produce Pb(Zr, Ti)O3 (PZT) thin films, control of the film stoichiometry and crystalline phase was achieved. The PZT films obtained showed good step coverage, 67%. Uniform PZT and PLZT thin films with a variation of film thickness of less than ±1.5% were successfully obtained on a 6–8 inch silicon wafer. For the evaluation of the crystallinity and epitaxial relationship of the PZT thin films, the total reflection X-ray diffraction (TRXD) method was used for the first time. Using TRXD, the in-plane orientations of PZT and Pt in PZT/Pt/MgO were evaluated. The growth mechanism of PbTiO3 and PZT thin films at the initial growth stage was also investigated using an atomic force microscope (AFM). The switching characteristics of PZT capacitors using Ir and IrO2 electrodes for memory device applications were also investigated and a PZT capacitor with no fatigue up to a switching cycle of 1011 was obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 129
Copyright
Copyright © Materials Research Society 1996

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References

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