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The Growth and Characterization of Germanium-Carbon Alloy Thin Films

Published online by Cambridge University Press:  25 February 2011

Haojie Yuan  and
R. Stanley Williams
Haojie Yuan
Affiliation:
Department of Chemistry and Biochemistry and Solid State Science Center, University of California, at Los Angeles, Los Angeles, CA 90024
R. Stanley Williams
Affiliation:
Department of Chemistry and Biochemistry and Solid State Science Center, University of California, at Los Angeles, Los Angeles, CA 90024
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Abstract

Thin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 270: Symposium M – Novel Forms of Carbon , 1992 , 91
Copyright
Copyright © Materials Research Society 1992

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References

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