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Growth and Characterization of Gase and GaAs/GaSe Hetero-Structures on As-Passivated Si Substrates

Published online by Cambridge University Press:  21 February 2011

J.E. Palmer ,
T. Saitoh ,
T. Yodo  and
M. Tamura
J.E. Palmer
Affiliation:
Optoelectronics Technology Research Laboratory, Tohkodai 5-5, Tsukuba, Ibaraki 300-26, Japan
T. Saitoh
Affiliation:
Optoelectronics Technology Research Laboratory, Tohkodai 5-5, Tsukuba, Ibaraki 300-26, Japan
T. Yodo
Affiliation:
Optoelectronics Technology Research Laboratory, Tohkodai 5-5, Tsukuba, Ibaraki 300-26, Japan
M. Tamura
Affiliation:
Optoelectronics Technology Research Laboratory, Tohkodai 5-5, Tsukuba, Ibaraki 300-26, Japan
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Abstract

We have grown and characterized layered structure GaSe on As-passivated Si( 111 ) and GaAs on GaSe on As-passivated Si(111) for the ultimate purpose of using layered structure GaSe as a lattice/thermal-expansion mismatch buffer layer for epitaxial GaAs on Si. Films were grown on (111) Si substrates by MBE and characterized by in-situ RHEED, ex-situ SEM, and both plan-view and cross-sectional TEM. GaSe grew epitaxially on As-passivated Si(111) substrates at 500°C with Se/Ga BEP (Beam Equivalent Pressure) ratios of 10-20. Small droplets were observed on the surface after GaSe growth, and are thought to be droplets of unreacted Ga. The density and size of the droplets decrease with increasing Se/Ga BEP ratio. When the GaSe surface was exposed to As, the droplets became GaAs islands. Subsequent GaAs growth was carried out at 400°C and 500°C, giving the following results for 300Å thick films: As grown GaAs films were highly twinned, and some polycrystalline GaAs was present in the film grown at 400°C. In-situ annealing at 650°C for 10 minutes reduced the density of twins in both cases. The morphology of the GaAs films are that of an interconnected network of islands, with a feature size of about 500Â and 1000Å for the film grown at 400°C and 500°C, respectively. In plan-view TEM Moire fringes from both GaAs and GaSe are observed and show conclusively that the GaAs grew epitaxially on the GaSe without contacting the Si substrate. Cross-sectional TEM shows the interface between the Si and GaSe is not smooth on the atomic scale. In spite of this, the GaSe becomes smooth with about 2 monolayers of growth and the GaAs/GaSe interface appears to be very smooth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 33
Copyright
Copyright © Materials Research Society 1994

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References

1 Hayashi, I., Japan. J. Appl. Phys. 32, 266, (1993).Google Scholar
2 Palmer, J.E., Saitoh, T., Yodo, T. and Tamura, M., Japan J. Appl. Phys, 32, L1126, (1993).Google Scholar
3 Ziman, J.M.: Principles of the Theory of Solids. 2nd edition. (Cambridge University Press, Cambridge, 1972), p 129.Google Scholar
4 Koma, A., Sunouchi, K. and Miyajima, T.: J. .Am. Vac. Soc, B3, 724, (1985).Google Scholar
5 Ueno, K., Abe, H., Sakai, K., Koma, A., Oigawa, H., andNannichi, Y.: Surface Science, 267, 43, (1992).Google Scholar
6 Yamada, A., Konagai, M., Okamoto, T., Kojima, N. and Takashi, K., 183rd meeting of the Electrochemical Society (SOTAPOCS XVIII) Honolulu, Hawaii, May 16-21, (1993).Google Scholar
7 Liu, K.Y., Ueno, K., Fujikawa, Y., Sakai, K. and Koma, A.: Japan. J. Appl. Phys. part 2, 32, L434, (1993).Google Scholar
8 Palmer, J.E., T.Saitoh, and Tamura, M.: to be published in J. of Appl. Phys., 74, 7211, (1993).Google Scholar
9 Bringans, R.D.: Crit. Rev. in Solid State and Mat. Sci., 17(4), (1992), 353.Google Scholar
10 Ishige, K. and Koguchi, N.: 11th record of Alloy Semiconductor Physics and Electronics Symposium, (Kyoto, Japan, July8-10, 1992), 245.Google Scholar
11 Chikyow, T. and Koguchi, N.:11th record of Alloy Semiconductor Physics and Electronics Symposium, (Kyoto, Japan, July8-10, 1992), 251.Google Scholar