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Growth and Characterization of Gan Bulk Crystals Via Vapor Phase Transport

Published online by Cambridge University Press:  17 March 2011

H. Shin ,
D. B. Thomson ,
P. Q. Miraglia ,
S. D. Wolter ,
R. Schlesser ,
Z. Sitar  and
R. F. Davis
H. Shin
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-7907
D. B. Thomson
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-7907
P. Q. Miraglia
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-7907
S. D. Wolter
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-7907
R. Schlesser
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-7907
Z. Sitar
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-7907
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-7907
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Abstract

Free-standing single crystals of bulk GaN were grown via unseeded vapor phase transport at 1130°C on hexagonal BN surfaces via direct reaction of Ga with ammonia. The number of nucleation events was reduced and the crystal size increased by introducing the ammonia at high temperatures. The resulting crystals were either needles or platelets depending on the process variables employed. Low V/III ratios achieved via ammonia flow rates ≤ 75sccm and/or ammonia total pressures ≤ 430Torr favored lateral growth. The average lateral growth rate for the platelets was ∼50μm/hr; the average vertical growth rate for the needles was ∼500μm/hr. Growth rates in all other directions for each of these two morphologies were very low. Seeded growth of both needle and platelet crystals was also achieved; however, the growth rate decreased at longer times and higher pressures due to reaction with H2 from the increased decomposition of ammonia. Nitrogen dilution suppressed this decomposition. A 2mm × 1.5mm GaN crystal was grown with minimal decomposition in a 66.7%NH3 and 33.3%N2 gas mixture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.54
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Porowski, S., MRS Internet J. Nitride Semicond. Res. 4, 13(1999).Google Scholar
2. Shibata, T., Sone, H., Yahashi, K., Yamaguchi, M., Hiramatsu, K., and Itoh, N., J. Cryst. Growth, 189/190, 67(1998).Google Scholar
3. Balkas, C. M., Sitar, Z., Zheleva, T., Bergman, L., Shmagin, I. K., Muth, J. F., Kolbas, R., Nemanish, R., and Davis, R. F., Mat. Res. Soc. Symp. Proc., 449, 41(1997).Google Scholar
4. Yamane, H., Kajiwara, T., Sekiguchi, T., and Shiamda, M., Jpn. J. Appl. Phys. 39, L146(2000).Google Scholar
5. Balkas, C. M., Sitar, Z., Zheleva, T., Bergman, L., Shmagin, I. K., Muth, J. F., Kolbas, R., Nemanich, R., and Davis, R. F., J. Cryst. Growth, 208, 100(2000).Google Scholar
6. Callahan, M., Harris, M., Suscavage, M., Bliss, D. and Baily, J., MRS Internet J. Nitride Semicond. Res. 4, 10(1999).Google Scholar
7. Rapcewicz, K., Nardelli, M. B., and Bernholc, J., Phys. Rev. B, 56(20), 12725(1997).Google Scholar
8. Koleske, D. D., Wickenden, A. E., Henry, R. L., Twigg, M. E., Culbertson, J. C., and Gorman, R. J., Appl. Phys. Lett., 73(14) 2018(1998).Google Scholar