Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T18:00:35.394Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and characterization of epitaxial films of ZnGeP2.

Published online by Cambridge University Press:  11 February 2011

G.A. Verozubova ,
A. I. Gribenyukov ,
M.C. Ohmer ,
N.C. Fernelius  and
J.T. Goldstein
G.A. Verozubova
Affiliation:
Institute of Optical Monitoring SB RAS, 10/3 Akademicheskii Tomsk, 634055, Russia
A. I. Gribenyukov
Affiliation:
Institute of Optical Monitoring SB RAS, 10/3 Akademicheskii Tomsk, 634055, Russia
M.C. Ohmer
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLPSO, Wright-Patterson Air Force Base, Dayton, OH, USA
N.C. Fernelius
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLPSO, Wright-Patterson Air Force Base, Dayton, OH, USA
J.T. Goldstein
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLPSO, Wright-Patterson Air Force Base, Dayton, OH, USA
Get access

Abstract

Thermodynamic analysis of the vapor phase over ZnGeP2 in Zn-Ge-P-Cl system has been carried out. The analysis showed that this system can be used for the vapor growth of ZnGeP2. Homoepitaxial layers of ZnGeP2 were grown in a closed system using chemical vapor transport. Electrical and photoluminescence properties of the layers were studied, and crystal lattice parameters were measured. Comparison of properties for bulk and vapor grown ZnGeP2 crystals were carried out. It was found that the vapor grown crystals have more perfect structure than the bulk ones, particularly, they have significantly lower vacancy concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M8.46
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Giles, N.C. and Halliburton, L.E., Native Defects in the Ternary Chalcopyrites. MRS Bulletin, July 1998, pp 37–40.Google Scholar
2. Verozubova, G.A., Gribenyukov, A.I., Korotkova, V.V., Trofimov, A., Vere, A.W., Flynn, C.J., Ynda, N.T., Ivanov, Yu.F.. Effect of high power electron irradiation on defect structure of the ZnGeP2 single crystals. Fifth International Conference on Modification of Materials with Particle Beams and Plasma Flows, Proceedings, Tomsk, Russia, 2000, pp. 323–326.Google Scholar
3. Vere, A W, Taylor, L L, Smith, P C, Flynn, C J, Saker, M K and Jones, J Mat. Res. Symp. Proc. 484 (1998) 495–505 Google Scholar
4. Verozubova, G.A., Gribenyukov, A.I., Korotkova, V.V.. Mat. Science and Eng., B48 (1997), 191–197.Google Scholar
5. Thermal constant of materials. Reference book in 10 volumes, vol. 3 edited by Glushko, V.P., Moscow, VINITI, 1968.Google Scholar
6. Andreev, Yu. M., Voevodin, V.G., Vjatkin, A.P. and Zuev, V.V.. “Nonlinear optical crystals for radiation conversion from IR lasers” In book: “Element base for optoelectronic devices”, edited by Zuev, V.E., Kabanov, M.V.. “Rasko”, Tomsk, 1992, pp. 55–74.Google Scholar
7. Averkieva, G.K., et.al., USSR Conference on ternary compounds and their applications, Abstract book, Kishinev, Shiinitca, 1976, 31.Google Scholar
8. Grishenko, G.A., Sakalos, A.P., Sodeika, A.S., Tregub, I.G., Lithuanian physical collection, XIX, N6, 1979, pp797–780.Google Scholar