Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T07:36:49.506Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Characterization of Epitaxial CoSi2 on Si(001)

Published online by Cambridge University Press:  28 February 2011

J.R. Jimenez ,
L.M. Hsiung ,
R.D. Thompson ,
Shin Hashimoto ,
K.V. Ramanathan ,
R. Arndt ,
K. Rajan ,
S.S. Iyer  and
L.J. Schowalter
J.R. Jimenez
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180
L.M. Hsiung
Affiliation:
Materials Engineering Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180
R.D. Thompson
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
Shin Hashimoto
Affiliation:
Physics Department, State University of New York, Albany NY 12222
K.V. Ramanathan
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180
R. Arndt
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180
K. Rajan
Affiliation:
Materials Engineering Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180
S.S. Iyer
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
L.J. Schowalter
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180
Get access

Abstract

The structural and electrical properties of epitaxial CoSi2, grown on Si(001) by molecular beam epitaxy, have been investigated. Most growth conditions successful on Si(111) have been found to result in misoriented grains when applied to Si(001). However, single-orientation (001) CoSi2 films, with low resistivities (16 µΩ-cm) and low ion channeling minimum yields (χmin=5%), have been obtained by direct codeposition of Co and Si at ~500°C at Co-rich stoichiometries. Single orientation (001) CoSi2 films have also been obtained by using a template method on epitaxially grown Si buffer layers, but the resistivities of these films have not been as good. A Schottky barrier height of 0.71 eV has been measured for single-orientation CoSi2(001)/Si(001). This is significantly higher than the barrier height of 0.64 eV for CoSi2(111)/Si(111).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 237
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Hunt, B.D., Lewis, N., Hall, E.L., Turner, L.G., Schowalter, L.J., Okamoto, Masako, and Hashimoto, Shin, Mat. Res. Soc. Symp. Proc. 56, 151 (1986).Google Scholar
2Tung, R.T. and Schrey, F., Appl. Phys. Lett. 54, 852 (1989).Google Scholar
3Tung, R.T. and Schrey, F., Appl. Phys. Lett. 55, 256 (1989)Google Scholar
4von Känel, H., Henz, J., Ospelt, M., and Wachter, P., Phys. Scr. T 19, 158 (1987).Google Scholar
5Yalisove, S.M., Tung, R.T., and Loretto, D., J. Vac. Sci. Technol. A 6, 1472 (1989).Google Scholar
6Lin, T.L., Fathauer, R.W., Grunthaner, P.J., and d’Anterroches, C., Appl. Phys. Lett. 52, 804 (1988).Google Scholar
7Hensel, J.C., Phillips, J.M., Batstone, J.L., Augustyniak, W.M., and Unterwald, F.C., Mat. Res. Soc. Symp. Proc. 91, 427 (1987).Google Scholar
8Badoz, P.A., Briggs, A., Rosencher, E., Arnaud d’Avitaya, F., and d’Anterroches, C., Appl. Phys. Lett. 51, 169 (1987).Google Scholar
9Rosencher, E., Delage, S., and Arnaud D’Avitaya, F., J. Vac. Sci. Technol. B 3, 762 (1985).Google Scholar
10Yeh, J.J., Appl. Phys. Lett. 55, 1241 (1989).Google Scholar
11Tung, R.T., Phys. Rev. Lett. 52, 461 (1984).Google Scholar
12Hauenstein, R.J., Schlesinger, T.E., McGill, T.C., Hunt, B.D., and Schowalter, L.J., J. Vac. Sci. Technol. A 4, 860 (1986).Google Scholar