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Growth and Characterization of Epitaxial BaF2 on InP

Published online by Cambridge University Press:  25 February 2011

Q. X. Jia  and
W. A. Anderson
Q. X. Jia
Affiliation:
State University of New York at Buffalo, Center of Electronic and Electro-Optic Materials, Department of Electrical and Computer Engineering, Bonner Hall, Amherst, NY 14260
W. A. Anderson
Affiliation:
State University of New York at Buffalo, Center of Electronic and Electro-Optic Materials, Department of Electrical and Computer Engineering, Bonner Hall, Amherst, NY 14260
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Abstract

Epitaxial thin films of BaF2 were deposited for the first time onto (100) InP at a substrate temperature of around 450°C to 480°C by RF magnetron sputtering. The structural properties of the BaF2 film were a strong function of the substrate temperature during film deposition. X-ray diffraction analysis revealed a pure c-axis orientation perpendicular to the substrate surface. Scanning electron microscopy surface scan indicated a highly textured film with grid growth morphology. Ellipsometry measurement on the films gave a refractive index in the range of 1.4 to 1.6. The capacitance vs voltage analysis on a capacitor with a structure of Au/BaF3/InP demonstrated a dielectric constant of around 7.3 for the BaF2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 747
Copyright
Copyright © Materials Research Society 1993

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References

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