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Growth and Characterization of Copper Indium Diselenide Thin Films by Molecular Beam Deposition

Published online by Cambridge University Press:  10 February 2011

H. Y. Ueng ,
D. Y. Chang  and
J. L. Lin
H. Y. Ueng
Affiliation:
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan
D. Y. Chang
Affiliation:
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan
J. L. Lin
Affiliation:
Department of Electrical Engineering, Hua Fan College of Humanities and Technology, Taipei, Taiwan
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Abstract

CuInSe2 thin films grown on Corning 7059 glass substrates were prepared by molecular beam deposition method with various Cu/In ratios in order to study the relationship between composition and material properties. Under a fixed copper beam flux intensity and overpressure selenium environments, the composition of films was modulated by changing the indium beam flux: intensity to obtain Cu-rich or In-rich films. The X-ray diffraction patterns show that the epitaxy films grown onto glass substrates are the polycrystalline structure. The grain size of polycrystalline films indicate that the surface morphology of the films are varied as a function of Cu/In ratio.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 255
Copyright
Copyright © Materials Research Society 1996

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