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Growth and Characterization of Bulk GaN Crystals at High Pressure and High Temperature

Published online by Cambridge University Press:  01 February 2011

M. P. D'Evelyn ,
K. J. Narang ,
D.-S. Park ,
H. C. Hong ,
M. Barber ,
S. A. Tysoe ,
J. Leman ,
J. Balch ,
V. L. Lou  and
S. F. LeBoeuf
...Show all authors
M. P. D'Evelyn
Affiliation:
GE Global Research Center, Niskayuna, NY 12309, USA
K. J. Narang
Affiliation:
GE Global Research Center, Niskayuna, NY 12309, USA
D.-S. Park
Affiliation:
GE Global Research Center, Niskayuna, NY 12309, USA
H. C. Hong
Affiliation:
GE Global Research Center, Niskayuna, NY 12309, USA
M. Barber
Affiliation:
GE Global Research Center, Niskayuna, NY 12309, USA
S. A. Tysoe
Affiliation:
GE Global Research Center, Niskayuna, NY 12309, USA
J. Leman
Affiliation:
GE Global Research Center, Niskayuna, NY 12309, USA
J. Balch
Affiliation:
GE Global Research Center, Niskayuna, NY 12309, USA
V. L. Lou
Affiliation:
GE Global Research Center, Niskayuna, NY 12309, USA
S. F. LeBoeuf
Affiliation:
GE Global Research Center, Niskayuna, NY 12309, USA
Y. Gao
Affiliation:
GE Global Research Center, Niskayuna, NY 12309, USA
J. A. Teetsov
Affiliation:
GE Global Research Center, Niskayuna, NY 12309, USA
P. J. Codella
Affiliation:
GE Global Research Center, Niskayuna, NY 12309, USA
P. R. Tavernier
Affiliation:
Materials Department, College of Engineering, University of California at Santa Barbara, Santa Barbara, CA 93106–5050, USA
D. R. Clarke
Affiliation:
Materials Department, College of Engineering, University of California at Santa Barbara, Santa Barbara, CA 93106–5050, USA
R. J. Molnar
Affiliation:
Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA 02173–9108, USA
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Abstract

We report the growth and characterization of bulk GaN single crystals by temperature-gradient recrystallization at high pressure and high temperature (HPHT), using apparatus adapted from that used to synthesize gem-grade diamond crystals. The bulk crystals are grown on seeds that were synthesized by hydride vapor phase epitaxy (HVPE) and subsequently removed from their sapphire substrate. Our largest crystals to date are 15×18 mm in diameter; however, the process is scalable to 50 mm and above. The crystals are transparent and well faceted, and dislocation densities below 100 cm−2 have been achieved. Additional characterization of the GaN crystals is also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y2.3
Copyright
Copyright © Materials Research Society 2004

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References

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