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Growth and Characteristics of a-Plane GaN/ZnO/GaN Heterostructure

Published online by Cambridge University Press:  23 April 2013

Chiao-Yun Chang ,
Huei-Min Huang ,
Yu-Pin Lan ,
Tien-Chang Lu ,
Hao-Chung Kuo ,
Shing-Chung Wang ,
Li-Wei Tu  and
Wen-Feng Hsieh
Chiao-Yun Chang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Huei-Min Huang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Yu-Pin Lan
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Tien-Chang Lu*
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Hao-Chung Kuo
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Shing-Chung Wang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Li-Wei Tu*
Affiliation:
Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Wen-Feng Hsieh
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
*
*Email:[email protected]
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Abstract

The crystal structure of a-plane GaN/ZnO heterostructures on r-plane sapphire was investigated by using the XRD and TEM measurment. It was found the formation of (220) ZnGa2O4 and crystal orientation of semipolar (10$\bar 1$3) GaN at GaN/ZnO interface. The epitaxial relation of normal surface direction are the sapphire (1$\bar 1$02) // a-GaN (11$\bar 2$0) and ZnGa2O4 (220) // semi-polar GaN (10$\bar 1$$\bar 3$). Beside, the emission peak energy of ZnO appears shift about 60 meV in the GaN/ZnO/GaN heterostructures due to the re-crystallization of ZnO layer with Ga or N atom and the formation of the localized state.

Keywords

crystal growthIII-VII-VI
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1538: Symposium FF – Compound Semiconductors: Thin-Film Photovoltaics, LEDs and Smart Energy Controls , 2013 , pp. 303 - 307
Copyright
Copyright © Materials Research Society 2013 

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