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The Growth and Characterisation of Ir Silicide Films on (111)Si

Published online by Cambridge University Press:  25 February 2011

M.A. Lawn ,
R.G. Elliman ,
M.C. Ridgway ,
R. Leckey  and
J.D. Riley
M.A. Lawn
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, GPO BOX 2476V, Melbourne, Australia
R.G. Elliman
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences, Australian National University, GPO Box 4, Canberra, Australia.
M.C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences, Australian National University, GPO Box 4, Canberra, Australia.
R. Leckey
Affiliation:
Research Centre for Electron Spectroscopy, La Trobe University Bundoora, Australia.
J.D. Riley
Affiliation:
Research Centre for Electron Spectroscopy, La Trobe University Bundoora, Australia.
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Abstract

A study of the growth of thin Ir silicide films on (111)Si substrates has been undertaken. Thin (2.0nm) ir films deposited onto Si substrates under ultra-high vacuum conditions have been observed to display remarkable film continuity and fine grain structure (lnm). In situ annealing at 1000°C resulted in the formation of large regions (>10µm) of epitaxial IrSi3 islands (∼1µm) with identical epitaxial orientations. By means of annealing an as-deposited (2.0nm) Ir film stepwise to 1000°C within a transmission electron microscope the evolution of Ir silicide phases and morphologies were observed. The epitaxial growth of the semiconducting IrSi1.75 phase is reported along with the formation of Ir silicide islands at temperatures between 700°C and 800°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 25
Copyright
Copyright © Materials Research Society 1991

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References

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