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Growing Pseudomorphic Layers Beyond the Critical Thickness Using Free-Standing Compliant Substrates

Published online by Cambridge University Press:  21 February 2011

C.L. Chua ,
W.Y. Hsu ,
F. Ejeckam ,
A. Tran  and
Y.H. Lo
C.L. Chua
Affiliation:
Cornell University, School of Electrical Engineering, Ithaca, NY 14853
W.Y. Hsu
Affiliation:
Cornell University, Department of Material Science, Ithaca, NY 14853
F. Ejeckam
Affiliation:
Cornell University, School of Electrical Engineering, Ithaca, NY 14853
A. Tran
Affiliation:
Cornell University, School of Electrical Engineering, Ithaca, NY 14853
Y.H. Lo
Affiliation:
Cornell University, School of Electrical Engineering, Ithaca, NY 14853
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Abstract

We demonstrated the high quality growth of exceedingly thick pseudomorphic layers on free-standing, compliant substrates using InGaAs and GaAs materials. A 1% compressively strained InGaAs layer was grown on a relaxed GaAs platform by MBE. We fabricated the 800 Å-thick compliant platforms before growing a lattice-mismatched layer that exceeds its critical thickness by about twenty times.

X-ray analysis confirms a shift in the InGaAs peaks grown on the compliant substrate. Such shifts are characteristic of strained layers. Atomic Force Microscope analysis verifies that the layers on compliant substrates are much smoother than layers grown on a plain substrate.

Pseudomorphic growth exceeding the critical thickness has important applications in the design of various electronic and photonic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 21
Copyright
Copyright © Materials Research Society 1994

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