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Growing Cobalt Triantimonide Using Vertical Bridgman Method and Effects of Post Annealing

Published online by Cambridge University Press:  21 March 2011

M. Akasaka ,
G. Sakuragi ,
H. Suzuki ,
T. Iida ,
Y. Takanashi  and
S. Sakuragi
M. Akasaka
Affiliation:
Department of Materials Science and Technology, Science University of Tokyo 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
G. Sakuragi
Affiliation:
Department of Materials Science and Technology, Science University of Tokyo 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
H. Suzuki
Affiliation:
Department of Materials Science and Technology, Science University of Tokyo 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
T. Iida
Affiliation:
Department of Materials Science and Technology, Science University of Tokyo 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
Y. Takanashi
Affiliation:
Department of Materials Science and Technology, Science University of Tokyo 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
S. Sakuragi
Affiliation:
Union Material Inc., 1640 Oshido-jyoudai, Tone-Machi, Kitasouma, Ibaraki 300–1602, Japan
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Abstract

Crystals of CoSb3 were grown using the vertical Bridgman method at growth rates that varied from 0.4 to 2.8 mm/h. Thermoelectric properties were analyzed for both as-grown and post-annealed samples. Polycrystalline CoSb3 surrounded by Sb was obtained. Samples grown at the rate of 0.4 mm/h had larger CoSb3 grains than samples grown at the 2.8 mm/h rate. For the as-grown samples, the Seebeck coefficient was smaller than 200 μ/K, which is a nominal value [1–3]. The presence of residual Sb resulted in a decrease in the Seebeck coefficient and an increase in the samples' electrical conductivity. A subsequent heat treatment at 800 °C for 20 h eliminated the residual Sb, resulting in a significant increase in the Seebeck coefficients (ranging from > 200 μV/K) in the annealed samples, as compared with the as-grown samples. The samples with a higher growth rate had larger Seebeck coefficients of ∼500 μ/K after annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 646 , 2000 , N5.34.1
Copyright
Copyright © Materials Research Society 2001

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References

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