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Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects

Published online by Cambridge University Press:  25 May 2015

Shun Sasaki ,
Shailesh Madisetti ,
Vadim Tokranov ,
Michael Yakimov ,
Makoto Hirayama ,
Steven Bentley ,
Rohit Galatage ,
Ajey P. Jacob  and
Serge Oktyabrsky
Shun Sasaki
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, USA SUMCO Corporation, Minato-ku, Tokyo 105-8634, JAPAN
Shailesh Madisetti
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, USA
Vadim Tokranov
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, USA
Michael Yakimov
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, USA
Makoto Hirayama
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, USA
Steven Bentley
Affiliation:
GLOBALFOUNDRIES at Albany NanoTech, Albany, NY 12203, USA
Rohit Galatage
Affiliation:
GLOBALFOUNDRIES at Albany NanoTech, Albany, NY 12203, USA
Ajey P. Jacob
Affiliation:
GLOBALFOUNDRIES at Albany NanoTech, Albany, NY 12203, USA
Serge Oktyabrsky
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, USA
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Abstract

Group III-Sb compound semiconductors are promising materials for future CMOS circuits. Especially, In1-xGaxSb is considered as a complimentary p-type channel material to n-type In1-xGaxAs MOSFET due to the superior hole transport properties and similar chemical properties in III-Sb’s to those of InGaAs. The heteroepitaxial growth of In1-xGaxSb on Si substrate has significant advantage for volume fabrication of III-V ICs. However large lattice mismatch between InGaSb and Si results in many growth-related defects (micro twins, threading dislocations and antiphase domain boundaries); these defects also act as deep acceptor levels. Accordingly, unintentional doping in InGaSb films causes additional scattering, increase junction leakages and affects the interface properties. In this paper, we studied the correlations between of defects and hole carrier densities in GaSb and strained In1-xGaxSb quantum well layers by using various designs of metamorphic superlattice buffers.

Keywords

III-Vdefectselectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1790: Symposium AA – Materials for Beyond the Roadmap Devices in Logic, Power and Memory , 2015 , pp. 13 - 18
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Madisetti, S., Tokranov, V., Greene, A., Yakimov, M., Hirayama, M., Oktyabrsky, S., Bentley, S. and Jacob, A. P., J. Vac. Sci. Technol. B., 32, 051206 (2014).CrossRefGoogle Scholar
Chu, R. L., Chiang, T. H., Hsueh, W. J., Chen, K. H., Lin, K. Y., Brown, G. J., Chyi, J. I., Kwo, J. and Hong, M., Appl. Phys. Lett. 2014,105,182106.Google Scholar
Hosseini Vajargah, S., Ghanad-Tavakoli, S., Preston, J. S., Kleiman, R. N. and Botton, G. A., J. Appl. Phys. 114,113101.CrossRefGoogle Scholar
Tokranov, V., Madisetti, S., Yakimov, M., Nagaiah, P., and Oktyabrsky, S., J. Crystal Growth 378, 631 (2013).CrossRefGoogle Scholar
Fanfoni, M., Tomellini, M., J. Electron. Spectrosc. Relat. Phenom. 76 123 (1995).CrossRefGoogle Scholar