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Group I elements in ZnO

Published online by Cambridge University Press:  01 February 2011

Bruno K. Meyer ,
N. Volbers ,
A. Zeuner ,
S. Lautenschläger ,
J. Sann ,
A. Hoffmann  and
U. Haboeck
Bruno K. Meyer
Affiliation:
[email protected], Justus Liebig Universität, 1. Physikalisches Institut, Heinrich Buff Ring 16, Giessen, N/A, 35392, Germany
N. Volbers
Affiliation:
[email protected], Justus Liebig Universität, 1. Physikalisches Institut
A. Zeuner
Affiliation:
[email protected], Justus Liebig Universität, 1. Physikalisches Institut
S. Lautenschläger
Affiliation:
stefan.lautenschlä[email protected], Justus Liebig Universität, 1. Physikalisches Institut
J. Sann
Affiliation:
[email protected], Justus Liebig Universität, 1. Physikalisches Institut
A. Hoffmann
Affiliation:
[email protected], Technische Universität Berlin, Institut für Festkörperphysik, Germany
U. Haboeck
Affiliation:
[email protected], Technische Universität Berlin, Institut für Festkörperphysik
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Abstract

Diffusion of Li, Na and K into single-crystal substrates of ZnO were performed. We compare the results with ZnO epitaxial films doped with the respective elements during growth. The diffused and in-situ doped layers were studied using mass spectroscopy, low temperature photoluminescence and Raman spectroscopy. Li and Na are known to produce deep acceptor centers which give rise to shallow donor to deep acceptor recombinations in the visible spectral region. We will demonstrate that also shallow acceptors are introduced having binding energies around 300 meV. A donor-acceptor pair recombination (zero phonon line at 3.05 eV) with LO phonon replica is observed analogous to the “edge” emission in other II-VI compounds.

Keywords

ZnoxideLi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE10-24
Copyright
Copyright © Materials Research Society 2006

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References

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