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Greatly Reduced Leakage Current in Ti- and La-doped Bi2FeCrO6 Prepared by High Pressure Synthesis

Published online by Cambridge University Press:  17 August 2011

Feiming Bai ,
Lihong Dai ,
Lei Shi  and
Huaiwu Zhang
Feiming Bai
Affiliation:
State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China, 610054
Lihong Dai
Affiliation:
State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China, 610054
Lei Shi
Affiliation:
State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China, 610054
Huaiwu Zhang
Affiliation:
State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China, 610054
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Abstract

Undoped Bi2FeCrO6, 5%Ti- and 10%La-doped Bi2FeCrO6 were prepared by a high pressure solid-state sintering method. The phase structure, electrical, ferroelectric and magnetic properties have been investigated. It is shown that undoped Bi2FeCrO6 has a serious leakage current problem, and doping either Ti or La can enhance the resistivity by 2-3 orders of magnitude. Furthermore, both Ti- and La-doped Bi2FeCrO6 show an antiferromagnetic spin order due to disordered B-site cation alignment. Weak ferromagnetism was only observed in undoped Bi2FeCrO6 and the reason is tentatively explained.

Keywords

ferroelectricferromagneticdopant
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1368: Symposium WW – Multiferroic, Ferroelectric, and Functional Materials, Interfaces and Heterostructures , 2011 , mrss11-1368-ww05-03
Copyright
Copyright © Materials Research Society 2011

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