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Grazing Incidence X-ray Topographic Studies of Threading Dislocations in Hydrothermal Grown ZnO Single Crystal Substrates

Published online by Cambridge University Press:  01 March 2013

Tianyi Zhou ,
Balaji Raghothamachar ,
Fangzhen Wu  and
Michael Dudley
Tianyi Zhou
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
Balaji Raghothamachar
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
Fangzhen Wu
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
Michael Dudley*
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
*
a[email protected]
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Abstract

ZnO single crystal substrates grown by the hydrothermal method have been characterized by grazing incidence X-ray topography using both monochromaticand whitesynchrotron X ray beams.11$\bar 2$4 reflection wasrecorded from the (0001) wafers and the different contrast patterns produced by different threading defects were noted. To uniquely identify the Burgers vectors of these threading dislocation defects, we use raytracingsimulation to compare with observed defect contrast. Our studies showed that threading screw dislocations are not commonly observed.Most threading edge dislocationshavetheBurgers vector of1⁄3[2$\bar 1$$\bar 1$0] or1⁄3[12$\bar 2$10]and a density of 2.88×104/cm2.

Keywords

crystallographic structuredislocationsoxide
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 121 - 126
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Reynolds, D.C., Look, D.C., Jogai, B., Solid State Commun. 99 (12), pp.873–875 (1996).CrossRefGoogle Scholar
Zu, P., Tang, Z.K., Wong, G.K.L., Kawasaki, M., Ohtomo, A., Koinuma, H., Segawa, Y., Solid State Commun. 103 (8), pp.459–463 (1997).CrossRefGoogle Scholar
Maeda, Katsumi, Sato, Mitsuru, Niikura, Ikuo and Fukuda, Tsuguo, Semicond. Sci. Technol. 20 (4), pp.49–54 (2005).CrossRefGoogle Scholar
Nicholas, Nathan Johann, Franks, George V. and Ducker, William A., CrystEngComm, 14, pp.1232–1240 (2012).CrossRefGoogle Scholar
Lin, C.Y., Liu, W.-R., Chang, C.S., Hsu, C.-H., Hsieh, W.F. and Chien, F.S.-S., J. Electrochem. Soc. 157 (3), pp.H268–H271 (2010).CrossRefGoogle Scholar
Wu, F.Z., Byrappa, S., Wang, H.H., Chen, Y., Raghothamachar, B., Dudley, M., Sanchez, E.K., Chung, G., Hansen, D., Mueller, S.G. and Loboda, M.J., Mater. Res. Soc. Symp. Proc. 1433 (2012).CrossRefGoogle Scholar
Chen, Y., Dudley, M., Sanchez, E.K. and MacMillan, M.F., J. Electron. Mater., 37, pp.713–720 (2008).CrossRefGoogle Scholar
Bowen, D.K. and Tanner, B. K., “High Resolution X-Ray Diffractometry and Topography”, Taylor & Francis, p.189 (1998).Google Scholar
Hirth, J.P. and Lothe, J., “Theory of Dislocations”, 2nd Edition, John Wiley& Sons, pp.59–79 (1982).Google Scholar
Eshelby, J.D. and Stroh, A. N., Phil. Mag. 42, p.1401 (1951).CrossRefGoogle Scholar