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Graphitic Schottky Contacts to Si formed by Energetic Deposition
Published online by Cambridge University Press: 07 October 2015
Abstract
Carbon films deposited by filtered cathodic vacuum arc have been used to form high quality Schottky diodes on p-Si. Energetic deposition with an applied substrate bias of -1 kV and with a substrate temperature of 100 °C has produced carbon diodes with rectification ratios of ∼ 3 × 106, saturation currents of ∼0.02 nA and ideality factors close to unity (n = 1.05). Simulations were used to estimate the effective work function and the thickness of an interfacial mixed (C/SiO2) layer from the current/voltage characteristics of the diodes.
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- MRS Online Proceedings Library (OPL) , Volume 1786: Symposium T – Graphene and Carbon Nanotubes , 2015 , pp. 51 - 56
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- Copyright © Materials Research Society 2015
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