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Grain-Scale Strain and Orientation Measurements during Electromigration in Al Conductor Lines by Synchrotron X-Ray Microbeam Diffraction

Published online by Cambridge University Press:  01 February 2011

Hongqing Zhang
Affiliation:
[email protected], Lehigh University, MSE, 5 E Packer Ave, Bethlehem, PA, 18015, United States, 610-758-4245
G. S. Cargill
Affiliation:
[email protected], Lehigh University, Materias Science and Engineering, 5 E Packer Ave, Bethlehem, PA, 18015, United States
Youzhang Ge
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Mechanical, Aerospace and Nuclear Engineering, Troy, NY, 12180, United States
A. M. Maniatty
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Mechanical, Aerospace and Nuclear Engineering, Troy, NY, 12180, United States
Wenjun Liu
Affiliation:
[email protected], Argonne National Laboratory, Advanced Photon Source, Argonne, IL, 60439, United States
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Abstract

Al conductor lines, with Ti-Al top and bottom layers and SiO2 passivation, were stressed with current density 1.5 × 106 A/cm2at 190°C, and the strains developed during electromigration were measured in-situ by white and monochromatic beam synchrotron x-ray microdiffraction. Grain-scale deviatoric strain measurements with 0.4µm beam size and perpendicular full strain measurements with 1.0µm beam size were made repeatedly during electromigration. A strong strain gradient developed along the upstream half of the conductor lines during electromigration, although no resistance changes, voids or extrusions were seen. Orientation maps showed near-bamboo grain structure. Results from an approximate analytic model, using the Eshelby inclusion theory, are consistent with the measurement results for late-stage electromigration-induced strains.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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