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Grain Growth in Thin Films With Variable Grain Boundary Energy

Published online by Cambridge University Press:  15 February 2011

H.J. Frost ,
Y. Hayashi ,
C.V. Thompson  and
D.T. Walton
H.J. Frost
Affiliation:
Dartmouth College, Thayer School of Engineering, Hanover, New Hampshire 03755
Y. Hayashi
Affiliation:
Dartmouth College, Thayer School of Engineering, Hanover, New Hampshire 03755 NEC Corporation, ULSI Research Laboratory, 1120Shimokuzawa, Kanagawa229, Japan
C.V. Thompson
Affiliation:
Dartmouth College, Thayer School of Engineering, Hanover, New Hampshire 03755
D.T. Walton
Affiliation:
Dartmouth College, Thayer School of Engineering, Hanover, New Hampshire 03755 Digital Equipment Corporation, 75 Reed Road, Hudson, Massachusetts 01749
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Abstract

In simulations of grain growth in thin films we have considered the effect of variations in grain boundary energy. Boundary energy depends on both the misorientation between the two neighboring grains, and the angles which the boundary plane makes with the crystallographic axes of the two crystals. Variations in grain boundary energy mean that dihedral angles at triple junctions deviate from 120°. The proportionality between boundary velocities and local curvatures, and the critical curvature for boundary pinning due to surface grooving also both depend on boundary energy. One effect of variable boundary energies is that grains no longer gain or lose area at rates determined solely by their topology or number of sides. (They no longer obey the Von Neumann/Mullins law). Another effect is that as the grain structures evolve, the fraction of high-energy boundaries decreases. Also, the stagnant structures have broader grain size distributions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 485
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Frost, H.J., Thompson, C.V., and Walton, D.T., Simulation of Thin Film Grain Structures: I. Grain Growth Stagnation, Acta Metall. et Mater. 38, 1455–1462 (1990).CrossRefGoogle Scholar
2. HFrost, J., Thompson, C.V., and Walton, D.T., Simulation of Thin Film Grain Structures: II. Abnormal Grain Growth, Acta Metall. et Mater. 40, 779–793 (1991).Google Scholar
3. Atkinson, H.V., Theories of Normal Grain Growth in Pure Single Phase Systems, Acta Metall. 36, 469–491 (1988).CrossRefGoogle Scholar
4. Glazier, J. A. and Weaire, D., The kinetics of cellular patterns, J. Physics: Condensed Matter 4, 1867–1894 (1992).Google Scholar
5. Rollett, A.D., Srolovitz, D.J., and Anderson, M.P., Simulation and Theory of Abnormal Grain Growth-Anisotropic G.B. Energies & Mobilities, Acta Metall. 37, 1227–1240 (1989).Google Scholar
6. Mullins, W.W., Two-Dimensional Motion of Idealized Grain Boundaries, J. A. p. 27, 900-904 (1956).Google Scholar
7. Thompson, C.V., Grain Growth in Thin Films, Ann. Rev. Mat Sci. 20, 245–268 (1990).Google Scholar
8. Bollman, W., Crystal Defects and Crystalline Interfaces. (Springer-Verlag, 1970).Google Scholar
9. Sutton, A.P. and Balluffi, R.W., On Geometric Criteria for Low Interfacial Energy, Acta Metall. 35, 2177–2201 (1987).Google Scholar
10. Read, W.T. and Shockley, W., Dislocation Models of Crystal Grain Boundaries, Phys. Rev. 78, 275–289 (1950).Google Scholar
11. H Frost, J., Thompson, C.V., Howe, C.L., and Whang, J., A Two-Dimensional Computer Simulation of Capillarity-Driven Grain Growth: Preliminary Results, Scripta Met 22, 65–70 (1987).Google Scholar
12. Johnson, W.A. and Mehl, R.F., Reaction Kinetics in Processes ofNucleation and Growth, Trans. AIME 135, 416–458 (1939).Google Scholar
13. HFrost, J. and Thompson, C.V., The Effect ofNucleation Conditions on the Topology & Geometry of Two-Dimensional Grain Structures, Acta Metall. 35, 529–540 (1985).Google Scholar
14. Mullins, W.W., The Effect of Thermal Grooving on Grain Boundary Motion, Acta Met. 6, 414–427 (1958).Google Scholar
15. Palmer, J.E., Thompson, C.V., and Smith, H.I., Grain Growth and Grain Size Distributions in Thin Germanium Films, J. Appl. Phys. 62, 2492 (1987).Google Scholar
16. Tracy, B.M., Davies, P.W., Fänger, D., and Gartman, P., Microstructural Characterization of Al-1% Si for Integrated Circuit Application, in Microstructural Science for Thin Film Metallizations in Electronic Applications, edited by Sanchez, J., Smith, D.A. and DeLanerolle, N. (TMS, 1988) pp. 157–167.Google Scholar
17. Wu, K., Baerg, W., and Jupiter, P., Effects of Al Microstructure on electromigration using a new reactive ion etching and SEM technique, Appl. Phys. Letters 58, 1299–1301 (1991).Google Scholar
18. Walton, D.T., Frost, H.J., and Thompson, C.V., The Development of Near-Bamboo and Bamboo Microstructures in Thin Film Strips, Appl. Phys. Letters 61, 40–42 (1992).Google Scholar