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Grain Formation in Polycrystalline Silicon Films Deposition on SiO2 at Very Low Temperatures

Published online by Cambridge University Press:  15 February 2011

Kun-Chih Wang ,
Ruo-Yu Wang ,
Tri-Rung Yew ,
Joseph J. Loferski  and
Huey-Liang Hwang
Kun-Chih Wang
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsinchu, Taiwan, ROC
Ruo-Yu Wang
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsinchu, Taiwan, ROC
Tri-Rung Yew
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsinchu, Taiwan, ROC
Joseph J. Loferski
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsinchu, Taiwan, ROC
Huey-Liang Hwang
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsinchu, Taiwan, ROC
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Abstract

This paper describes the grain formation in very low temperature polycrystalline silicon (poly-Si) growth on SiO2. The silicon films were deposited by electron cyclotron resonance chemical vapor deposition with hydrogen dilution at 250°C and without any thermal annealing. The largest grain sizes observed in the poly-Si film is about 1 μm. The grains have a leaf-like shape as observed in plan-view transmission electron microscopy. The grain morphologies were determined by cross-sectional transmission electron microscopy and atomic force microscopy. Raman scattering spectrum was used to determine the crystalline fraction. X-ray diffraction patterns were used to study the film crystallinity. A simple model of grain formation is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 149
Copyright
Copyright © Materials Research Society 1995

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References

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