Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T07:43:30.858Z Has data issue: false hasContentIssue false
  • English
  • Français

Graded Buffer Layers for Molecular Beam Epitaxial Growth of High in Content InGaAs on GaAs for Optoelectronics

Published online by Cambridge University Press:  25 February 2011

S. M. Lord ,
B. Pezeshki ,
A. F. Marshall ,
J. S. Harris Jr ,
R. Fernandez  and
A. Harwit
S. M. Lord
Affiliation:
Solid State Laboratories, Stanford University, Stanford, CA
B. Pezeshki
Affiliation:
Solid State Laboratories, Stanford University, Stanford, CA
A. F. Marshall
Affiliation:
Center for Materials Research, Stahford University, Stanford, CA
J. S. Harris Jr
Affiliation:
Solid State Laboratories, Stanford University, Stanford, CA
R. Fernandez
Affiliation:
Lockheed Missiles and Space Company Laboratories, Palo Alto, CA
A. Harwit
Affiliation:
Lockheed Missiles and Space Company Laboratories, Palo Alto, CA
Get access

Abstract

Linearly-graded buffer layers are used to achieve exciton resonances in InGaAs/GaAs at the 1.3 μm dispersion minimum of optical fibers. We investigate the effect of various gradients in the linearly-graded InGaAs buffer layer of a p-i-n structure designed as an optical modulator. Samples were grown by molecular beam epitaxy on GaAs substrates at 450°C. Each consisted of an n-type graded buffer region followed by thirty In0.5Ga0.5 As quantum wells with Alo.35Ga0.65As barriers, and 5000 Å of ρ-type InGaAs. Gradients of 7.5%, 15%, and 30% In/μm, or 0.5%, 1%, and 2% misfit/μm were used to grade the In concentration from 0% to 35%. Room temperature absorption measurements reveal well-defined zero-field excitonic features near 1.3 μm for all samples. The exciton resonance becomes sharper as the gradient decreases. Analyses of these samples by TEM and double crystal X-ray diffraction confirm the trend that a slower grading yields better quality material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 221
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Lord, S. M., Pezeshki, B., and Harris, J. S. Jr, Elect. Lett. 28, 1193 (1992).Google Scholar
2 Jelley, K. W., Engelmann, R. W. H., Alavi, K., and Lee, H., Appl. Phys. Lett. 55, 70 (1989).Google Scholar
3 Cunningham, J. E., Goossen, K., Williams, M., and Jan, W., J. Vac. Sci. Technol. B 10, 949 (1992).Google Scholar
4 Pezeshki, B., Lord, S. M., and Harris, J. S. Jr, Appl. Phys. Lett. 59, 888 (1991).Google Scholar
5 Lord, S. M., Pezeshki, B., Kim, S.D., and Harris, J. S. Jr, to appear in J. Cryst. Growth (1993).Google Scholar
6 Olsen, G. H., J. Cryst. Growth 31, 223 (1975).Google Scholar
7 Chang, K. H., Gibala, R., Drolovitz, D. J., Bhattacharya, P. K., and Mansfield, J. F., J. Appl. Phys. 67, 4093 (1990).Google Scholar
8 Cunningham, J. E., Goossen, K. W., Williams, M., and Jan, W. Y., Appl. Phys. Lett. 60, 727 (1992).Google Scholar
9 Vandenberg, J. M., Hamm, R. A., Panish, M. B., and Temkin, H., J. Appl. Phys. 62, 1278 (1987).Google Scholar
10 Cunningham, J. E., private communication.Google Scholar