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Graded Buffer Layers for Molecular Beam Epitaxial Growth of High in Content InGaAs on GaAs for Optoelectronics

Published online by Cambridge University Press:  25 February 2011

S. M. Lord ,
B. Pezeshki ,
A. F. Marshall ,
J. S. Harris Jr ,
R. Fernandez  and
A. Harwit
S. M. Lord
Affiliation:
Solid State Laboratories, Stanford University, Stanford, CA
B. Pezeshki
Affiliation:
Solid State Laboratories, Stanford University, Stanford, CA
A. F. Marshall
Affiliation:
Center for Materials Research, Stahford University, Stanford, CA
J. S. Harris Jr
Affiliation:
Solid State Laboratories, Stanford University, Stanford, CA
R. Fernandez
Affiliation:
Lockheed Missiles and Space Company Laboratories, Palo Alto, CA
A. Harwit
Affiliation:
Lockheed Missiles and Space Company Laboratories, Palo Alto, CA
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Abstract

Linearly-graded buffer layers are used to achieve exciton resonances in InGaAs/GaAs at the 1.3 μm dispersion minimum of optical fibers. We investigate the effect of various gradients in the linearly-graded InGaAs buffer layer of a p-i-n structure designed as an optical modulator. Samples were grown by molecular beam epitaxy on GaAs substrates at 450°C. Each consisted of an n-type graded buffer region followed by thirty In0.5Ga0.5 As quantum wells with Alo.35Ga0.65As barriers, and 5000 Å of ρ-type InGaAs. Gradients of 7.5%, 15%, and 30% In/μm, or 0.5%, 1%, and 2% misfit/μm were used to grade the In concentration from 0% to 35%. Room temperature absorption measurements reveal well-defined zero-field excitonic features near 1.3 μm for all samples. The exciton resonance becomes sharper as the gradient decreases. Analyses of these samples by TEM and double crystal X-ray diffraction confirm the trend that a slower grading yields better quality material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 221
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Lord, S. M., Pezeshki, B., and Harris, J. S. Jr, Elect. Lett. 28, 1193 (1992).Google Scholar
2 Jelley, K. W., Engelmann, R. W. H., Alavi, K., and Lee, H., Appl. Phys. Lett. 55, 70 (1989).Google Scholar
3 Cunningham, J. E., Goossen, K., Williams, M., and Jan, W., J. Vac. Sci. Technol. B 10, 949 (1992).Google Scholar
4 Pezeshki, B., Lord, S. M., and Harris, J. S. Jr, Appl. Phys. Lett. 59, 888 (1991).Google Scholar
5 Lord, S. M., Pezeshki, B., Kim, S.D., and Harris, J. S. Jr, to appear in J. Cryst. Growth (1993).Google Scholar
6 Olsen, G. H., J. Cryst. Growth 31, 223 (1975).Google Scholar
7 Chang, K. H., Gibala, R., Drolovitz, D. J., Bhattacharya, P. K., and Mansfield, J. F., J. Appl. Phys. 67, 4093 (1990).Google Scholar
8 Cunningham, J. E., Goossen, K. W., Williams, M., and Jan, W. Y., Appl. Phys. Lett. 60, 727 (1992).Google Scholar
9 Vandenberg, J. M., Hamm, R. A., Panish, M. B., and Temkin, H., J. Appl. Phys. 62, 1278 (1987).Google Scholar
10 Cunningham, J. E., private communication.Google Scholar