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Gold-Silicon Interfaces: High Resolution Electron Microscopy Reactions. Precipitation and Subsurface Gettering

Published online by Cambridge University Press:  26 February 2011

R. W. Carpenter  and
M. J. Kim
R. W. Carpenter
Affiliation:
Center for Solid State Science. Arizona State University. Tempe. AZ 85287-1704
M. J. Kim
Affiliation:
Center for Solid State Science. Arizona State University. Tempe. AZ 85287-1704
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Abstract

Deposition of Au on exsitu cleaned (100) Si wafers resulted in the formation of a discontinuous polvcrvstalline Au layer containing lattice defects. On parts of the interface Au and Si were separated by a thin oxide layer, but elsewhere were in direct contact, with no evidence of metastable phase formation. Post deposition heating to 1000°C. well above the 370°C eutectic temperature of the system, caused formation of a reaction zone at the interface, and disappearance of the thin oxide layer. No amorphous phases formed during cooling. Quenching produced small Au precipitates in Si-rich regions. If the wafer contained dislocations. Au precipitation was observed on subboundaries directly connected to the Au/Si interface, but not on dislocations remote from the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 153
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Bemski, G.. Phys. Rev. 111, 1515 (1958).Google Scholar
2.Baginski, T. R. and Monkowski, J. R., J. Electrochem. Soc. 133, 762 (1986).Google Scholar
3.Huntley, F. A. and Willoughby, A. F.W., J. Electrochem. Soc. 120, 414 (1973).Google Scholar
4.Hatibucken, M. and Lay, G. Le, Surface Science 168, 122 (1986).Google Scholar
5.Narusawa, T., Kinoshita, K., Gibson, W.M. and Hiraki, A., J. Vac. Sci. Tech. 18, 872 (1981).Google Scholar
6.Kim, M. J. and Carpenter, R. W., Ultramic. 21, 327 (1987).Google Scholar
7.Gerlach, W. and Goel, B., Sol. St. Electr. 10, 589 (1967).Google Scholar
8.Tsaur, B. Y. and Maher, J. W., Phil. Maa. A. 43, 345 (1981).Google Scholar