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Gold/Niobium Thin Film Metallizations for GaAs Devices and Circuits

Published online by Cambridge University Press:  21 March 2011

Robert Esser  and
Aris Christou
Robert Esser
Affiliation:
Naval Research Lab Washington, DC 20375
Aris Christou
Affiliation:
Department of Materials Engineering University of Maryland College Park, MD 20742
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Abstract

A refractory metallization of Au/Nb is proposed for use in first level metallization of GaAs devices. The diffusion and reaction kinetics are explored using sheet resistance measurements, along with X-ray diffraction and Auger electron spectroscopy depth profiling. The interdiffusion coefficients are reported. Diodes are fabricated using Nb/Au metallization and characterized

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 695: Symposium L – Thin Films: Stresses and Mechanical Properties IX , 2001 , L6.23.1
Copyright
Copyright © Materials Research Society 2002

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References

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