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Giant Magnetoresistance Behavior in Epitaxial Nd0.7Sr0.3MnO3−δ and La0.67Ba0.33MnO3−δ Thin Films

Published online by Cambridge University Press:  15 February 2011

G.C. Xiong
Affiliation:
also Department of Physics and National Mesoscopic Physics Laboratory, Peking University, 100871 Beijing, P.R. China.
Q. Li
Affiliation:
Center for Superconductivity Research, University of Maryland, College Park, MD 20742-4111
H.L. Ju
Affiliation:
Center for Superconductivity Research, University of Maryland, College Park, MD 20742-4111
J. Wu
Affiliation:
Center for Superconductivity Research, University of Maryland, College Park, MD 20742-4111
L. Senapati
Affiliation:
Center for Superconductivity Research, University of Maryland, College Park, MD 20742-4111
R.L. Greene
Affiliation:
Center for Superconductivity Research, University of Maryland, College Park, MD 20742-4111
T. Venkatesan
Affiliation:
Center for Superconductivity Research, University of Maryland, College Park, MD 20742-4111
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Abstract

Epitaxial Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films with large magnetoresistance ratios have been prepared by pulsed laser deposition. Huge negative magnetoresistance ratios of -ΔR/RH > 1×106 % were obtained at 60 K and a magnetic field of 8 T in a Nd0.7Sr0.3MnO3-δ film. The influence of sample preparation conditions on the resistivity behavior of these films has been studied. Results suggest that oxygen stoichiometry and diffusion are important factors in causing the behavior observed in doped manganese oxide films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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