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Gettering of Metallic Impurities in Silicon

Published online by Cambridge University Press:  21 February 2011

A. Ourmazd  and
W. Schröter
A. Ourmazd
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
W. Schröter
Affiliation:
IV. Physikalisches Institut, University of Göttingen, Fed. Rep. Germany.
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Abstract

We report the results of a study of the microstructural changes brought about by the gettering of metallic impurities in silicon. Phosphorus gettering proceeds by the formation of metal disilicides at the silicon/phosphosilicate glass interface. By showing that iron is strongly localized at the interface by phosphorus gettering, we present the first evidence that phosphorus gettering can proceed independently of Fermi level effects. Our first results on the intrinsic gettering of nickel lend support to the notion that the emission of silicon interstitials brought about by phosphorus diffusion (and SiP formation), or intrinsic gettering (SiOx, formation), plays an important role in the gettering process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 25
Copyright
Copyright © Materials Research Society 1985

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References

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