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Gettering of Impurities during High Dose Implantation of Al or Cr into Si and the Resulting Effect on Structure and Composition

Published online by Cambridge University Press:  21 February 2011

F. Namavar ,
J. I. Budnick  and
F. A. Otter
F. Namavar
Affiliation:
Physics Department and Institute of Materials Science, The University of Connecticut, Storrs, CT 06268
J. I. Budnick
Affiliation:
Physics Department and Institute of Materials Science, The University of Connecticut, Storrs, CT 06268
F. A. Otter
Affiliation:
United Technologies Research Center, East Hartford, CT 06108
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Abstract

This paper presents strong evidence for carbon and oxygen gettering during high dose implantation of Cr and Al into Si by implanted ions or Si atoms. Rutherford Backscattering (RBS) and Auger Electron Spectroscopy (AES) experiments of Cr and Al implanted Si samples in a diffusion pumped vacuum (DPV) system (≃ 10−6 Torr) clearly indicate that the incorporation of carbon or oxygen occurs preferentially and depends on the surface composition which is controlled by the dose of implantation and by sputteripg.

The implantation of Cr and Al in a DPV system (≃ 10−6 Torr) results in a large increase in the concentration and retention of implanted atoms compared to implantation in a UHV system (≃ 10−8 Torr). For implantation in a DPV system, the Cr distribution broadens up to a factor of two. For Al a bimodal or broadened distribution could be observed by nuclear resonance profiling (NRP).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 55
Copyright
Copyright © Materials Research Society 1985

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References

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