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The Gettering and Electrical Activity of Ni, Au, and Cu in Epitaxial Si/Si(2%Ge)/Si during RTA

Published online by Cambridge University Press:  28 February 2011

Tian-Qun Zhou ,
Andrzej Buczkowski ,
Zbigniew Radzimski  and
George A. Rozgonyi
Tian-Qun Zhou
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
Andrzej Buczkowski
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
Zbigniew Radzimski
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
George A. Rozgonyi
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
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Abstract

A study of gettering and electrical activity of metallic impurities Ni, Au and Cu has been carried out on epitaxial Si/Si(2%Ge)/Si wafers containing interfacial misfit dislocations. The impurities were intentionally introduced from a backside deposited thin metal followed by rapid thermal annealing (RTA). Transmission Electron Microscopy (TEM) results indicate that the impurities were gettered along the misfit dislocations in near-surface regions either as Au precipitate colonies, or as NiSi2 and CuSi silicide precipitates. Data from Scanning Electron Microscopy (SEM) in the Electron Beam Induced Current (EBIC) mode revealed that these precipitates dominate the recombination properties of the initially inactive misfit dislocation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 55
Copyright
Copyright © Materials Research Society 1991

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References

1. Almaggoussi, A., Sicart, J., Robert, J.L., Chaussemy, G., and Laugier, A., Appl. Phys. Lett. 56, 2536 (1990)Google Scholar
2. Spark, Douglas R. and Chapman, Randall G., J. Electrochem. Soc. 133, 1201 (1986)CrossRefGoogle Scholar
3. Rozgonyi, G.A., Salih, A.S.M., Radzimski, Z., Kola, R.R., Honeycutt, J., Beam, K.E., and Lindberg, K., J. Cryst. Growth, 85, 300 (1987)Google Scholar
4. Salih, A.S., Kim, H.J., Davis, R.F., and Rozgonyi, G.A., Appl. Phys. Lett. 46, 419 (1985)Google Scholar
5. Lee, D.M., Posthill, J.B., Shimura, F. and Rozgonyi, G.A., Appl. Phys. Lett. 53, 370 (1988)Google Scholar
6. Lee, D.M., Maher, D.M., Shimura, F., and Rozgonyi, G.A., in Semiconductor Silicon 1990, edited by Huff, H.R., Barraclough, K.G. and Chikawa, J. (The Electrochemical Society, Pennington, NJ, 1990), p.638 Google Scholar
7. Radzimski, Z.J., Zhou, T.-Q., Buczkowski, A., and Rozgonyi, G.A., Appl. Phys. A (1991)Google Scholar
8. Kola, R.R., Rozgonyi, G.A., Li, J., Rogers, W.B., Tan, T.Y., Beam, K.E., and Lindberg, K., Appl. Phys. Lett. 55, 2108 (1989)Google Scholar