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Germanium Far Infrared Blocked Impurity Band Detectors

Published online by Cambridge University Press:  10 February 2011

C. S. Olsen ,
J. W. Beeman ,
W. L. Hansen  and
E. E. Hallerab
C. S. Olsen
Affiliation:
Lawrence Berkeley National Laboratory University of California at Berkeley Berkeley, California 94720USA University of California at Berkeley Berkeley, California 94720USA
J. W. Beeman
Affiliation:
Lawrence Berkeley National Laboratory University of California at Berkeley Berkeley, California 94720USA
W. L. Hansen
Affiliation:
Lawrence Berkeley National Laboratory University of California at Berkeley Berkeley, California 94720USA
E. E. Hallerab
Affiliation:
Lawrence Berkeley National Laboratory University of California at Berkeley Berkeley, California 94720USA University of California at Berkeley Berkeley, California 94720USA
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Abstract

We report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 215
Copyright
Copyright © Materials Research Society 1998

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