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Ge/Pd and Si/Pd/Ge/Pd Non-Alloyed Ohmic Contacts to InP Examined by Backside Secondary Ion Mass Spectrometry

Published online by Cambridge University Press:  25 February 2011

S. A. Schwarz ,
T. Sands ,
R. Bhat ,
M. Koza ,
M. A. A. Pudensi ,
L. C. Wang  and
S. S. Lau
S. A. Schwarz
Affiliation:
Bellcore, Red Bank, NJ 07701–7040
T. Sands
Affiliation:
Bellcore, Red Bank, NJ 07701–7040
R. Bhat
Affiliation:
Bellcore, Red Bank, NJ 07701–7040
M. Koza
Affiliation:
Bellcore, Red Bank, NJ 07701–7040
M. A. A. Pudensi
Affiliation:
IFGW-UNICAMP, 13081 Campinas, Brazil
L. C. Wang
Affiliation:
Dept. of Elec. Eng., Texas A&M Univ., College Station, TX 77843
S. S. Lau
Affiliation:
Dept. of Elec, and Comp. Eng., UC-San Diego, La Jolla, CA 92093
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Abstract

High resolution SIMS (secondary ion mass spectrometry) depth profiles of Ge/Pd and Si/Pd/Ge/Pd non-alloyed ohmic contacts on InP are obtained by sputter-etching from the back (semiconductor) side. The samples contain an InGaAs etch stop layer, to allow chemical thinning, and InGaAsP marker layers, which allow alignment and calibration of the depth profiles. Detailed comparisons are made to corresponding contacts on GaAs, processed and analyzed under similar conditions. The importance of interfacial alloy formation, semiconductor regrowth, and dopant incorporation are highlighted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 525
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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