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Geometrical effects and disintegration of narrow TiSi2/poly-Si lines

Published online by Cambridge University Press:  25 February 2011

H. Norström ,
K. Maex  and
P. Vandenabeele
H. Norström
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef 75, 3030 Leuven, Belgium
K. Maex
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef 75, 3030 Leuven, Belgium
P. Vandenabeele
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef 75, 3030 Leuven, Belgium
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Abstract

The geometrical shape and the thermal stability of the TiSi2/poly-Si interface on narrow lines has been studied. The examined line-widths varied between 0.8 μm and 1.5 μm. The thermal stability was found to strongly correlate to the actual line-width of the structures. At the onset of degradation, at and above 900°C, narrow lines were observed to disintegrate at a much faster rate than wider ones. Cross-sectional microscopy (TEM and SEM) revealed the TiSi2/poly-Si interface to be curved inwards. The interface bowing was found to be more pronounced on narrow lines. It is suggested that the interface bowing results from a mechanical pinning of the TiSi2/poly-Si interface by the side-wall spacers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 173
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Ting, C.Y., d’Heurle, F.M., Iyer, S.S. and Fryer, P.M.; J.Electrochem.Soc. 133, 1986, pp.2621 CrossRefGoogle Scholar
2. Nygren, S., Ostling, M., Petersson, C.S., Norstrom, H., Ryden, K-H., Buchta, R. and Chatfield, C.; Thin Solid Films, 168, 1989, pp.325 CrossRefGoogle Scholar
3. Shenai, K., Picante, P.A., Smith, G.A., Lewis, N., McConell, M.D., Norton, J.F., Hall, E.L. and Baliga, B.J.; Mat. Res. Soc. Proc.,106, 1988, pp.149 CrossRefGoogle Scholar
4. Shukla, R.K. and Multani, J.S.; Proceedings VMIC–87, 1987, pp.470 Google Scholar
5. Phillips, J.R., Zheng, L-R. and Mayer, J.W.; Mat. Res. Soc. Proc, 106, 2, pp.155 CrossRefGoogle Scholar
6. Norström, H., Maex, K. and Vandenabeele, P.; submitted to Am. Journal of Vacuum Sci. and Technol.Google Scholar
7. Lippens, P., Maex, K., Van den hove, L., De Keersmaecker, R., Probst, V., Koppenol, W. and van der Weg, W.; Journal de Physique. 49, 1988 pp.C4-191 Google Scholar