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The Gentle Electronic Nature of Pulsed Beam Annealing, or Does It Really Go Superfluid?

Published online by Cambridge University Press:  15 February 2011

J. A. Van Vechten
J. A. Van Vechten*
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA
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Abstract

Until recently two theories of what may be occurring during pulsed laser/electron/ion beam annealing of Si, Ge, GaAs, and other semiconductors enjoyed credence. One held that the material became hot and underwent normal thermal melting. The other held that the material annealed in the presence of a hot dense plasma of excited free carriers, electrons and holes. A closer examination of previous experiments, as well as new experiments, particularly those of Marquardt et al., which indicate an absence of free carrier absorption in the infrared, make both these theories untenable. They also make possible a more sophisticated understanding of what really is happening. The present status of this subject is reviewed. In particular the available evidence that the plasma excited by the pulsed radiation undergoes a boson condensation to a superfluid phase is described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 49
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Schwuttke, G. H., Howard, J. K. and Ross, R. F., U. S. Patent 3,585,088.Google Scholar
2. Khaibullin, I. B. et al. , Radiation Eff. 36, 225 (1978) and references therein.CrossRefGoogle Scholar
3. Kachurin, G. A. etal. in: Ion Implantation in Semiconductors, Chernow, F., Borders, J. A. and Brice, D. K. eds. (Plenum, New York, 1977).Google Scholar
4. Oxford English Dictionary.Google Scholar
5. Wang, J. C. et al. , Appl. Phys. Lett. 33, 455 (1978).Google Scholar
6. Baeri, P. et al. , J. Appl. Phys. 50, 788 (1979).CrossRefGoogle Scholar
7. Surko, C. M. et al. , Appl. Phys. Lett. 34, 635 (1979).Google Scholar
8. Schultz, J. C. and Collins, R. J., Appl. Phys. Lett. 34, 363 (1979).CrossRefGoogle Scholar
9. Van Vechten, J. A. et al. , Phys. Let. 74a, 417 (1979).Google Scholar
10. Hoonhout, D. and Saris, F. W., Phys. Lett. 74a, 253 (1979).Google Scholar
11. Dvurechenskii, A. V. et al. , Phys. Stat. Sol. a 63, K203 (1981).Google Scholar
12. Hoonhout, D., J. Appl. Phys., to be published (TBP).Google Scholar
13. Khaibullin, I. B. et al. , J. Phys. Soc. Japan 49 Suppl. A, 1281 (1980).Google Scholar
14. Van Vechten, J. A., Tsu, R. and Saris, F. W., Phys. Lett. 74a, 422 (1979).CrossRefGoogle Scholar
15. Bourgoin, J. C. and Corbett, J. W., Rad. Eff. 36, 157 (1978) and therein.CrossRefGoogle Scholar
16. Troxell, J. R. et al. , Phys. Rev. B 19, 5336 (1979).Google Scholar
17. Lang, D. V. and Kimerling, L. C., Phys. Rev. Lett. 33, 489 (1974).CrossRefGoogle Scholar
18. Monemar, B. et al. , Phys. Rev. Lett. 41, 260 (1978) and therein;Google Scholar
Basson, J. H. and Van Vechten, J. A., Phys. Rev. B 23, 2032 (1981).CrossRefGoogle Scholar
19. Martin, R. M., Phys. Rev. 186, 871 (1968).CrossRefGoogle Scholar
20. Heine, V. and Van Vechten, J. A., Phys. Rev. B. 13, 1622 (1976).Google Scholar
21. Wautelet, M. and Laude, L. D., Appl. Phys. Lett. 36, 197 (1980);CrossRefGoogle Scholar
Bok, J., Phys. Lett. 84a, 448 (1981).Google Scholar
22. Van Vechten, J. A., Inst. Phys. Conf.Ser. No. 59 473(1981).Google Scholar
23. Kittel, C. in Thermal Physics (John Wiley, New York, 1969) p. 49 and 94.Google Scholar
24. Svantesson, K. G. et al. , Solid State Comm. 9, 213 (1971).CrossRefGoogle Scholar
25. Nilsson, N. G., Phys. Scripta 8, 166 (1973).Google Scholar
26. Yoffa, E. J., Phys. Rev. B. 21, 2415 (1980) and 23, 1909 (1981).Google Scholar
27. Dumke, W. P., Phys. Lett. 78a, 477 (1980).Google Scholar
28. Van Vechten, J. A., J. de Phys. 41, C4–15 (1980).Google Scholar
29. Tsu, R. and Jha, S. S., J. de Phys. 41, C4–25 (1980).Google Scholar
30. Marquardt, C. L. et al. , this Conf. and submitted to Appl. Phys. Lett.Google Scholar
31. Kim, D. M. et al. , this. Conf.Google Scholar
32. Aydinlil, A. et al. , Phys. Rev. Lett. 46, 1640 (1981) -Google Scholar
see also Compaan, A. et al. , this Conf.Google Scholar
33. Lo, H. W. and Compaan, A., Phys. Rev. Lett. 44, 1604 (1980).Google Scholar
34. Compaan, A. and Lo, H. W., Inst. Phys. Conf.Ser. No. 59 467(1981).Google Scholar
35. Compaan, A. et al. , Int. Conf. Phon. Phys. Bloomington9/81.Google Scholar
36. Van Vechten, J. A. and Compaan, A. D., Solid. State Comm. 39, 867 (1981).CrossRefGoogle Scholar
37. Yamada, M. et al. , Phys. Lett. 85a, 191 (1981).CrossRefGoogle Scholar
38. Van Vechten, J. A., Solid State Comm. 39, 1285 (1981).Google Scholar
39. See also Noga, M., Phys. Lett. 80a, 91 (1980);Google Scholar
Nagy, M. and Noga, M., TBP.Google Scholar
40. Schrieffer, J. R. in Theory of Superconductivity (Benjamin, New York, 1964).Google Scholar
41. Yoffa, E. J. in Laser and Electron Beam Processing of Materials White, C. W. and Peercy, P. S. eds. (Academic, New York, 1980) p. 59;CrossRefGoogle Scholar
also Nathan, M. I. et al. , Appl. Phys. Lett. 36, 512 (1980).Google Scholar
42. Van Vechten, J. A., Appl. Phys. Lett. p. 53;Google Scholar
Van Vechten, J. A. and Wautelet, M., Phys. Rev. B 23, 5543 (1981).Google Scholar
43. Wautelet, M. and Van Vechten, J. A., Phys. Rev. B 23, 5551 (1981).Google Scholar
44. Eberhardt, W., Brickman, R. and Kaldor, A., J. Phys. Soc. Japan 49 Suppl. A, 133 (1980).Google Scholar
45. Murakami, K. et al. , J. Phys. Soc. Japan 49 Suppl A, 1303 (1980).Google Scholar
46. Yamada, M. et al. , J. Phys. Soc. Japan 49 Suppl. A, 1299 (1980).Google Scholar
47. Moison, J. M. and Bensoussan, M., Phys. Comp. Semicond. Interf. - 9 TBP.Google Scholar
48. Bentini, G. et al. , Phys. Rev. Lett. 46, 156 (1981).Google Scholar
49. Seah, M. P. and Dench, W. A., Surf. Interf. Anal. 1, 2 (1979).Google Scholar
50. Kanter, H., Phys. Rev. B 1, 522 and 2357 (1970).CrossRefGoogle Scholar
51. Krolikowski, W. F. and Spicer, W. F., Phys Rev. 185, 882 (1969) and B 1 478 (1970).Google Scholar
52. Crowell, C. R. and Sze, S. M. in Physics of Thin Films (Academic, New York, 1967) Vol. 4 pp. 325.Google Scholar
53. Pannetier, B. and Maneval, J. P., J. de Phys. 39, C6–541 (1978);Google Scholar
Phys. Rev. B 23, 85 (1981).Google Scholar
54. Maneval, J. P. and Wen, S., TBP.Google Scholar
55. Stritzker, B. et al. , Phys. Rev. Lett. 47, 356 (1981).Google Scholar
56. Van Vechten, J. A., TBP;Google Scholar
Aydinli, A. et al. , TBP.Google Scholar
57. Larson, B. C., this Conf.Google Scholar
58. Van Vechten, J. A., Jpn. J. Appl. Phys., TBP.Google Scholar
59. Gauster, W. B., Phys. Rev., 187, 1035 (1969).Google Scholar
60. Liu, J. M., Appl. Phys. Lett. 39, 755 (1981).Google Scholar
61. See also Canali, C. et al. , IEEE Trans. Electron. Device ED–22, 1045 (1975).CrossRefGoogle Scholar
62. Hanabusa, M., Suzuki, M. and Nishugaki, S., Appl. Phys. Lett. 38, 385 (1981).Google Scholar
63. Jerome, D., Rice, T. M. and Kohn, W., Phys. Rev. 158, 462 (1967).Google Scholar
64. Bogoliubov, N. N., Sov. Phys. JETP 34 (7), 41 (1958).Google Scholar
65. Anderson, P. W., Phys. Rev. 112, 1900 (1958).Google Scholar
66. Wynne, J. J. and Boyd, G. D., Appl. Phys. Lett. 12, 191 (1980)Google Scholar
67. Wynne, J. J., Phys. Rev. 178, 1295 (1969).Google Scholar
68. Van Vechten, J. A. and Aspnes, D. E., Phys. Lett. 30a, 346 (1969).Google Scholar
69. Van Vechten, J. A. et al. in Tenth International Conference on the Physics of Semiconductors Keller, S. P., Hensel, J. C., Stern, F. eds., (CONF-700801, National Bureau of Standards, Springfield, VA, 1970) p.82.Google Scholar
70. Keldysh, L. V., Soviet Phys. JETP 34(7), 788 (1958).Google Scholar
71. Aspnes, D. E., Phys. Rev. 153, 972 (1967).Google Scholar
72. Wang, C. C. and Ressler, N. W., Phys. Rev. B 2, 1827 (1970).CrossRefGoogle Scholar
73. Van Vechten, J. A. and Martin, R. M., Phys. Rev. Lett. 28, 446 (1972) Note Printer's Switch of Figs. 1 and 2.Google Scholar
74. Baur, J., Maschke, K. and Baldereschi, A., Solid State Comm. 39, 1297 (1981).Google Scholar