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Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

Published online by Cambridge University Press:  26 February 2011

D. Y. C. Lie ,
A. Vantomme ,
F. Eisen ,
M. -A. Nicolet ,
V. Arbet-Engels  and
K.L. Wang
D. Y. C. Lie
Affiliation:
Dept. of Electr. Eng., California Institute of Technology, Pasadena, CA 91125
A. Vantomme
Affiliation:
Dept. of Electr. Eng., California Institute of Technology, Pasadena, CA 91125
F. Eisen
Affiliation:
Dept. of Electr. Eng., California Institute of Technology, Pasadena, CA 91125
M. -A. Nicolet
Affiliation:
Dept. of Electr. Eng., California Institute of Technology, Pasadena, CA 91125
V. Arbet-Engels
Affiliation:
University of California, Los Angeles, CA 90024
K.L. Wang
Affiliation:
University of California, Los Angeles, CA 90024
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Abstract

We have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1079
Copyright
Copyright © Materials Research Society 1992

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References

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